R11558 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – PHOTOMULTIPLIER TUBE

PHOTOMULTIPLIER TUBE
R11558
28 mm (1-1/8 Inch) Diameter, 9-stage, Bialkali Photocathode, Side-on Type
High Gain and Low Dark Current
300 nm to 650 nm Spectral Response
SPECIFICATIONS
GENERAL
Parameter
Description/Value
Unit
Spectral Response
300 to 650
nm
Wavelength of Maximum Response
400
nm
Photocathode
MateriaI
Minimum Effective Area
Bialkali
8 × 24
—
mm
Window Material
Borosilicate glass
—
Dynode
Structure
Number of Stages
Circular-cage
9
—
—
Direct Interelectrode Anode to Last Dynode
4
pF
Capacitances
Anode to All Other Electrodes
6
pF
Base
11-pin base JEDEC No. B11-88 —
Weight
Approx. 45
g
Operating Ambient Temperature
-30 to +50
°C
Storage Temperature
-30 to +50
°C
SuitabIe Socket
E678–11A (Sold Separately) —
SuitabIe Socket Assembly
E717–63 (Sold Separately) —
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
Unit
Supply Between Anode and Cathode
1250
V
Voltage Between Anode and Last Dynode
250
V
Average Anode Current
0.1
mA
Figure 1: Typical Spectral Response
TPMSB0235EA
10²
10¹
CHARACTERISTlCS (at 25 °C)
Parameter
Min.
Luminous (2856 K)
40
Radiant at 400 nm
—
Cathode Quantum
Sensitivity Efficiency at 400 nm
—
Blue Sensitivity Index
(CS 5-58)
—
Anode
Luminous (2856 K)
200
Sensitivity _{Radiant at 400 nm}
—
Gain
—
Anode Dark Current
(After 30 min Storage in Darkness)
—
Time
Anode Pulse Rise Time —
Response Electron Transit Time —
Typ.
60
60
18.6
7.1
600
6 × 10⁵
1.0 × 10⁷
1
2.2
22
Max.
—
—
—
—
2000
—
—
10
—
—
Unit
µA/lm
mA/W
%
—
A/lm
A/W
—
nA
ns
ns
10⁰
10^-1
10^-2
10^-3
200
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P
Ratio
1
1
1
1
1
1
1
1
1
1
Supply Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode
CATHODE RADIANT SENSITIVITY
QUANTUM EFFICIENCY
300 400 500 600 700 800
WAVELENGTH (nm)
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.