R11102 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – PHOTOMULTIPLIER TUBE

PHOTOMULTIPLIER TUBE
R11102, R11102-01
38 mm Diameter Photomultiplier Tube
For Scintillation Counting, Gamma Camera
Bialkali Photocathode, 10 Stages, Head-on Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Window Material
Dynode
Structure
Number of Stages
Operating Ambient Temperature
Storage Temperature
Description / Value
Unit
300 to 650
nm
420
nm
Bialkali
—
34
mm
Borosilicate glass
—
Circular and linear-focused
—
10
—
-30 to +50
°C
R11102 : -30 to +50
R11102-01: -80 to +50
°C
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage
Average Anode Current
Parameter
Between Anode and Cathode
Between Anode and Last Dynode
Value
Unit
1250
V
200
V
0.1
mA
CHARACTERISTICS (at 25 °C)
Parameter
Luminous (2856 K)
Cathode Sensitivity
Radiant at 420 nm
Blue Sensitivity Index (CS 5-58)
Anode Sensitivity
Luminous (2856 K)
Radiant at 420 nm
Gain
Anode Dark Current (after 30 min storage in darkness)
Time Response
Anode Pulse Rise Time
Electron Transit Time
Stability
Long Term
Short Term
Pulse Linearity
±2 % Deviation
±5 % Deviation
Min.
80
—
10
—
—
—
—
—
—
—
—
—
—
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
( ): Measured with the special voltage distribution ratio (Tapered Divider) shown below.
Typ.
120
89
11.5
120
8.9 × 10⁴
1.0 × 10⁶
2
3.2
34
0.5
0.5
10 (50)
30 (70)
Max.
—
—
—
—
—
—
20
—
—
—
—
—
—
Unit
µA/lm
mA/W
—
A/lm
A/W
—
nA
ns
ns
%
%
mA
mA
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
Electrodes
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P
Normal Divider Type
2
1
1
1
1
1
1
1
1
1
1
Tapered Divider Type
2
1
1
1
1
1
1.2 1.5 2.2 3.6
3
Supply Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2012 Hamamatsu Photonics K.K.