P8079_07 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – InAs photovoltaic detector

INFRARED DETECTOR
InAs photovoltaic detector
P8079 series, P7163
Infrared detectors with high sensitivity and high-speed response
InAs photovoltaic detectors have high sensitivity and high-speed response in the near infrared region from 1.5 to 3.8 µm.
These detectors offer better characteristics than PbSe photoconductive detectors.
Features
l Thermoelectrically cooled type: high sensitivity
and high-speed response
l Metal dewar type available for low light measurement
l Long-wavelength cut-off of up to 3.8 µm
l Easy-to-use detector/preamp modules available
Applications
l Gas analysis
l Infrared radiation measurement
l Infrared spectrophotometry
l FTIR
Accessories (Optional)
l Heatsink for one-stage TE-cooled type
l Heatsink for two-stage TE-cooled type
l Temperature controller
l Infrared detector module with preamp
A3179
A3179-01
C1103-04
P4631-01 (Integrated with P8079-21)
l Amplifiers for InAs photovoltaic detector C4159-05
(only for P7163)
s Specifications / Absolute maximum ratings
Type No.
D im e n sio n a l
outline/
W indow
material *
Package
Cooling
P8079-01
➀/S
TO-5
Non-cooled
P8079-11
P8079-21
P7163
➁/S
TO-8
One-stage TE-cooled
Two-stage TE-cooled
➂/S Metal dewer
LN2
* Window material S: sapphire glass
Active
area
(mm)
φ1
Thermistor
power
dissipation
(mW)
-
0.2
-
Absolute maximum ratings
Reverse
Operating
voltage temperature
VR
Topr
(V)
(°C)
Storage
temperature
Tstg
(°C)
0.5
-40 to +60 -55 to +60
s Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
M e asu rem en t
condition
Elem ent
tem perature
T
Peak
sensitivity
wavelength
λp
Cut-off
wavelength
λc
Photo
sensitivity
S
λ=λp
Shunt
resistance
Rsh
D^∗
(λp, 1200, 1)
P8079-01
P8079-11
P8079-21
P7163
(°C)
25
-10
-30
-196
(µm)
3.45
3.30
3.25
3.00
(µm)
3.8
3.6
3.5
3.1
(A/W)
1.1
1.3
(Ω)
10
80
200
1 × 10⁵
Min. Typ.
(cm·Hz^1/2/W ) (cm ·Hz^1/2/W )
1.5 × 10⁹ 2 × 10⁹
7.5 × 10⁹ 1 × 10¹⁰
1.5 × 10¹⁰ 2 × 10¹⁰
3.5 × 10¹¹ 6 × 10¹¹
NEP
λ=λp
(W/Hz^1/2)
4.4 × 10^-11
8.9 × 10^-12
4.4 × 10^-12
1.5 × 10^-13
Rise time Term inal
tr capacitance
VR=0 V
Ct
RL=50 Ω VR=0 V
0 to 63 % f=1 MHz
(µs)
(pF)
0.1
80
10
0.1
5
150
1