P791_07 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – PbSe photoconductive detector

INFRARED DETECTOR
PbSe photoconductive detector
P791/P2038/P2680 series, P3207-05
Detection capability up 5 µm range (TE-cooled type)
Hamamatsu provides various types of PbSe photoconductive cells including room temperature operation types and thermoelectrically cooled
types. Cooled type PbSe photoconductive cells offer higher sensitivity and improved S/N, and are widely used in precision photometry such as in
analytical instruments.
Features
l High-speed response
l Room temperature operation
Compared to other types of detectors used in the same
wavelength range, PbSe cells have higher response
speed and can also operate at room temperature,
making them useful in a wide range of applications
such as gas analyzers, etc.
l Lower temperature detection limit: 50 ˚C approx.
Applications
l Radiation thermometer
l Flame detector
l Gas analyzer
l Film thickness gauge
Accessories (Optional)
l Heatsink for one-stage TE-cooled type
A3179
l Heatsink for two-stage TE-cooled type
A3179-01
l Temperature controller for TE-cooled type
C1103-04
l Preamplifier for PbS/PbSe photoconductive detector C3757-02
l Infrared detector module with preamp Non-cooled type P4245
Cooled type P4639
s Specification / Absolute maximum ratings
Absolute maximum ratings
Type No.
Dimensional
outline ^{Package Cooling}
Active Thermistor Thermistor TE-cooler
area resistance power current
dissipation dissipation
Supply
voltage
Operating
temperature
Topr
(mm) (kΩ)
(mW)
(A)
(V)
(°C)
P791-11
P791-13
➀
2×2
TO-5 Non-cooled 3 × 3
-
-
-
P3207-05
➁
2×2
P2038-02
P2038-03
P2680-02
P2680-03
➂
One-stage 2 × 2
➃
TO-8
TE-cooled 3 × 3
Two-stage 2 × 2
TE-cooled 3 × 3
9
1.5
100 -30 to +50
0.2
1.0
Storage
temperature
Tstg
(°C)
-55 to +60
s Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
Measurement _Peak
condition
Element
temperature
T
sensitivity
wavelength
λp
Cut-off
wavelength
λc
Photo sensitivity
S *²
λ=λp
Vs=15 V
D^∗
(500, 600, 1)
D^∗
Rise time
tr
(λp, 600, 1) _{0 to 63 %}
Min.
Typ.
Min.
Typ.
Max.
(°C)
(µm)
(µm)
(V/W) (V/W) ^{(c m· Hz1/2/W) (c m· Hz1/2/W) (c m· Hz1/2/ W)} (µs)
P791-11
P791-13
25
4.0
4.8
7 × 10² 1 × 10³
3 × 10² 5 × 10²
5 × 10⁷
1 × 10⁸
1 × 10⁹
3
P3207-05 *¹
4.3
7 × 10² 1 × 10³
-
-
8 × 10⁸
P2038-02
P2038-03
P2680-02
P2680-03
-10
4.1
5.1
2.2 × 10³ 3 × 10³
1 × 10³ 1.3 × 10³
1 × 10⁸
3 × 10⁸
3 × 10⁹
-20
4.2
5.2
2.7 × 10³ 4 × 10³
1.2 × 10³ 2 × 10³
2 × 10⁸
4 × 10⁸
4 × 10⁹
5
*1: Half width 400 nm
*2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance
Dark
resistance
Rd
(MΩ)
0.3 to 1.5
1.7 to 7.0
1.8 to 8.0
1