P3257_07 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – MCT photoconductive detector Non-cooled type and TE-cooled type suitable for long, continuous operation

INFRARED DETECTOR
MCT photoconductive detector
P3257/P3981/P2750 series
Non-cooled type and TE-cooled type suitable for long, continuous operation
Features
Applications
l Choice of spectral response (up to 12 µm)
The band gap can be adjusted by controlling the composition
ratio of HgTe and CdTe. Utilizing this fact, various types are
available in different spectral characteristics.
l Photoconductive element that decreases its resistance
l Radiation thermometer
l Gas analyzer
l Infrared spectrophotometer
l FTIR
l CO2 laser monitor
by input of infrared light
l Custom devices available
Accessories (Optional)
Custom devices not listed in this catalog are also
available with different spectral response, active area
size and number of element.
l Easy-to-use infrared detector modules with preamp
available
l Heatsink for two-stage TE-cooler A3179-01
(Can also be used with P3257-31)
l Heatsink for three-stage TE-cooler A3179-04
l Temperature controller C1103-05 (-25 to -75 ˚C)
l Preamp
C1103-07 (20 to -30 ˚C)
C5185-01 (P3981/P2750 series)
l (Preamp for P3257-30/-31 available upon request)
Infrared detector modules with preamp
P4631-10 (P3257-31)
P4631 (P3981)
s G eneral ratings / Absolute m axim um ratings
P4631-04 (P2750)
Type No.
D im e n s io n a l
o u tlin e /
W indow
material *¹
Package
Cooling
Active
area
(m m )
Therm istor
power
dissipation
(mW )
P3257-30
➀/Se with BNC connector Non-cooled
-
P3257-31
➁/Se
TO-8
O ne-stage
T E -c o o le d
P3981
P3981-01
P2750-08
➁/S
➂/S
➁/S
TO-8
TO-66
T w o -s ta g e
T E -c o o le d
1×1
0.2
TO-8
P2750
P2750-06
➃/S
TO-3
Three-stage
TE-cooled 0.25 × 0.25
*1: W indow m aterial S : Sapphire glass
Se: ZnSe
Absolute m axim um ratings
TE-cooler
allowable
current
Allowable
current
O p e ra ting
te m pe ra tu re
Topr
Storage
tem perature
Tstg
(A)
(m A )
(°C)
(°C)
-
50
1.5
50
3
3
-40 to +60 -55 to +60
1.0
6
6
3
s Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
M
easureme
condition
nt
Peak
sensitivity
Elem ent
tem perature
T
wavelength
λp
Cut-off
wavelength
λc
Photo
sensitivity
S
λ=λp *³
*²
D^∗
(500, 1200, 1) *⁴
D^∗
NEP
(λp *³, 1 2 0 0 , 1 ) λ =λ p *³
Rise tim e D ark
tr
re s is ta n c e
0 to 63 % Rd
Min.
Typ.
(°C) (µm) (µm)
(V/W ) (cm ·H z^1/2/W ) (cm ·H z^1/2/W ) (cm ·H z^1/2/W ) (W /H z^1/2)
(µs)
(Ω )
P3257-30
25
6.5
11.0
2 × 10^-3 5.0 × 10⁵ 3.0 × 10⁶ 2.0 × 10⁵ 5.0 × 10^-7 1 (ns)
30
P3257-31
0
7.0
11.5
5 × 10^-3 1.0 × 10⁶ 6.0 × 10⁶ 5.0 × 10⁵ 2.0 × 10^-7 1 (ns)
35
P3981
P3981-01
-30
3.6
4.3
1 × 10⁴ 5.0 × 10⁸ 5.0 × 10⁹ 1.3 × 10¹¹ 7.7 × 10^-13
10
600
P2750-08
4.8
5.4
3 × 10² 3.0 × 10⁸ 3.0 × 10⁹ 1.5 × 10¹⁰ 6.7 × 10^-12
2
160
P2750
P2750-06
-60
4.8
5.5
2 × 10³
3 × 10³
1.0 × 10⁹ 9.0 × 10⁹
4.5 × 10¹⁰
2.2 × 10^-12
5.0 × 10^-13
3
200
*2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optim um bias current.
*3: P3257-30/-31: λ=10.6 µm
*4: P3257-30/-31: (800, 1200, 1)
1