P11120-201_15 Datasheet, PDF (1/6 Pages) Hamamatsu Corporation – InAsSb photovoltaic detector

InAsSb photovoltaic detector
P11120-201
High-speed response and high sensitivity in the 5 μm spectral band
Thermoelectrically cooled infrared detector with no liquid nitrogen required
The P11120-201 is an infrared detector that provides high sensitivity in the 5 μm spectral band due to our unique crystal
growth technology. The InAsSb photovoltaic detector has a PN junction that ensures high-speed response and high reliability.
Typical applications include gas analysis such as CO2, SOx, CO and NOx. Unlike the P11120-901 metal dewar type detector,
the P11120-201 is easy to use as it uses a compact package (TO-8) not requiring liquid nitrogen.
Features
High-speed response
High sensitivity
High reliability
Compact, thermoelectrically cooled TO-8 package
Environment-friendly due to use of InAsSb
Suitable for detecting infrared rays emitted from QCL
Applications
Gas analysis
Radiation thermometers
Thermal imaging
Remote sensing
FTIR
Spectrophotometry
Options (sold separately)
Heatsink for two-stage TE-cooled type A3179-01
Temperature controller C1103-04
Infrared detector module with preamp C4159-07
Structure
Parameter
Window material
Package
Cooling
Photosensitive area
Specification
Unit
Sapphire
-
TO-8
-
Two-stage TE-cooled
-
ϕ1.0
mm
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Thermistor power dissipation
-
0.2
mW
Reverse voltage
VR
0.1
V
Operating temperature
Topr
-40 to +60
°C
Storage temperature
Tstg
-55 to +60
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
www.hamamatsu.com
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