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P10090 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – InAs photovoltaic detector
INFRARED DETECTOR
InAs photovoltaic detector
P10090 series
Low noise, high reliability infrared detectors (for 3 µm band)
InAs photovoltaic detectors have high sensitivity in the infrared region around 3 µm as with PbS photoconductive detectors, and also
feature low noise and high reliability. P10090 series is a new family of InAs photovoltaic detectors that deliver even higher sensitivity than
our convensional products (P8079 series).
Features
l Low noise
l High reliability
l High detectivity (D*)
l Available in multi-element arrays (custom product)
Applications
l Gas analysis
l Laser detection
l Infrared spectrophotometry
l Radiation thermometer
Accessories (Optional)
l Heatsink for one-stage TE-cooled type
l Heatsink for two-stage TE-cooled type
l Temperature controller
l Infrared detector module with preamp
l Amplifiers for InAs photovoltaic detector
(custom-made product)
A3179
A3179-01
C1103-04
P4631-01
s Specifications/Absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *
Package
Cooling
P10090-01
➀/S
TO-5
P10090-11
P10090-21
➁/S
TO-8
* Window material S: sapphire glass
Non-cooled
One-stage
TE-cooled
Two-stage
TE-cooled
Active
area
(mm)
φ1
Thermistor
power
dissipation
(mW)
-
0.2
Absolute maximum ratings
Reverse
Operating
voltage temperature
VR
Topr
(V)
(°C)
Storage
temperature
Tstg
(°C)
0.5
-40 to +60 -40 to +80
s Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
Measurement
condition
Element
temperature
T
Peak
sensitivity
wavelength
λp
Cut-off
wavelength
λc
Photo
sensitivity
S
λ=λp
Shunt resistance
Rsh
D∗
(λp, 600, 1)
Min. Typ.
Min.
Typ.
(°C)
(µm) (µm)
(A/W)
(Ω)
(Ω) (c m· Hz1/2/ W) (c m· Hz1/2/ W)
P10090-01
25
3.35 3.65
1.0
40
70 3.0 × 109 4.5 × 109
P10090-11
P10090-21
-10
3.30 3.55
-30
3.25 3.45
1.2
250
1000
400 1.0 × 1010 1.6 × 1010
1300 2.0 × 1010 3.2 × 1010
NEP
λ=λp
(W/Hz1/2)
1.5 × 10-11
5.3 × 10-12
2.8 × 10-12
Rise time
tr
VR=0 V
RL=50 Ω
0 to 63 %
(µs)
0.70
0.45
0.30
1