L8411 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – HIGH POWER QUASI-CW LASER DIODE

PRELIMINARY DATA
HIGH POWER QUASI-CW
LASER DIODE L8411
High power Quasi-CW operation
FEATURES
High optical power : 50 to 100W/bar in average
High stability
Long life
High cost performance
APPLICATIONS
Pumping source for solid state lasers
Materials processing
Welding
Soldering
Medical systems
Our high power Quasi-CW laser diode, L8411, features several advantages such as high stability with long life, high
cost performance with compact structure, and higher peak intensity. It can be applied as light source to pump solid
state lasers, for material processing like welding or soldering, and for medical systems. The lasing areas consist of
small laser emitters arranged in line and are thus called “Bar” structure. A high Quasi-CW output power as high as
10kW at peak was achieved by stacking ten Bars. Cooling methods can be selected from Peltier-cooling, water-cooling
and Funryu-cooling (patent pending : Japan 8-139479, WO 00/11717). A high power laser module with a focusing lens
and a driving electronics are optionally available.
ABSOLUTE MAXIMUM RATINGS (Each bar)
Parameter
Radiant Output Power / bar
Symbol
φe
Low Duty Ratio Type
105
High Duty Ratio Type
55
Reverse Voltage
VR
2.0
2.0
Pulse Duration
Tw
200
200
Duty Ratio
DR
Operating Temperature
Top
1
20
+15 to +35
Storage Temperature
Tstg
-20 to +40
Unit
W
V
µsec
%
˚c
˚c
CHARACTERISTICS (Each bar, Ta=20˚c)
Parameter
Symbol
Low Duty Ratio Type
Conditions
Value
Radiant Output Power / bar
φe
100
Forward Current
IF
φe=100W
120
Peak Emission Wavelength
λp
φe=100W
808
Spectral Radiation Half Bandwidth ∆λ
φe=100W
4
Forward Voltage
VF
φe=100W
2.0
Beam Spread Angle : Parallel
θ//
: Vertical
θ⊥
FWHM
10
35
Lasing Threshold Current
Ith
25
Array Length
-
10
Maximum Number of Stacks
-
25
φ *Contact sales stuff for emitting wave-length and radiant output power ( e) other than above.
High Duty Ratio Type
Conditions
Value
50
φe=50W
80
φe=50W
808
φe=50W
5
φe=50W
1.9
10
FWHM
35
20
10
6
Unit
W
A
nm
nm
V
˚ (degree)
˚ (degree)
A
mm
stack
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2000 Hamamatsu Photonics K.K.