L7060-02 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – HIGH-POWER INFRARED PULSED LASER DIODE

HIGH-POWER
INFRARED PULSED LASER DIODE
L7060-02
˙FEATURES
˔High output power (Пepʾ30W)
˔High speed rise time (tr=0.5 ns typ.)



˙APPLICATIONS
˔Laser rader
˔Range finder
˔Excitation light source
˔Optical trigger
˔Security barrier
Figure 1: Dimensional Outline (Unit: mm)
5.4 +0.05
-0.1
(MBTT
8JOEPX
LD Chip
4.6 ʶ 0.2
3.0 ʶ 0.2
1.2 Max.
˙ABSOLUTE MAXIMUM RATINGS
Parameter
Pulsed Foward Current
Symbol
IFP
Value
35
Reverse Voltage
VR
2
Pulsed Radiant Output Power Пep
40
Pulse Duration (FWHM)
tw
100
Duty Ratio
DR
0.075
Operating Temperature
Top -30 to +85
Storage Temperature
Tstg -40 to +125
Unit
A
V
W
ns
%
ˆ
ˆ
0.45
2.54
Side View
Cathode
(Common to Case)
Anode
(Pin Connection)
45ˆ
Bottom View
Anode
Cathode
˙ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25ˆ)
Parameter
Pulsed Radiant Power
Peak Emission Wavelength
Spectral Radiation Half Bandwidth
Forward Voltage
Rise Time
Beam Spread Angle : Parallel
: Vertical
Lasing Threshold Current
Symbol Condition
Пep
IFP=30A
Еp
϶Е
VF
IFP=30A
tr
В FWHM
В˵ IFP=30A
Ith
Min.
30
-
-
-
-
-
-
-
Typ.
-
870
4
7
0.5
9
30
1
Note: General operating conditionПepʽ W, twʽ0 ns, Repetition frequencyʽ kHz
Max.
-
-
-
-
-
-
-
-
Unit
W
nm
nm
V
ns
degree
degree
A
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.˓C 1998 Hamamatsu Photonics K.K.