L7055-04 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – HIGH-POWER INFRARED PULSED LASER DIODE

˙FEATURES
˔High output power (Пepʽ0W)
˔High speed rise time (tr=0.5 ns typ.)



˙APPLICATIONS
˔Laser rader
˔Range finder
˔Excitation light source
˔Optical trigger
˔Security barrier
HIGH-POWER
INFRARED PULSED LASER DIODE
L7055-04
Figure 1: Dimensional Outline (Unit: mm)
Glass Window
LD Chip
9.0 ^+-ɹ00.1ɹ
5.7 ʶ 0.2
2.8 ʶ 0.3
˙ABSOLUTE MAXIMUM RATINGS
Parameter
Pulsed Foward Current
Symbol
IFP
Value
30
Reverse Voltage
VR
2
Pulsed Radiant Output Power Пep
40
Pulse Duration (FWHM)
tw
100
Duty Ratio
DR
0.075
Operating Temperature
Top -30 to +85
Storage Temperature
Tstg -40 to +125
Unit
A
V
W
ns
%
ˆ
ˆ
0.45
2.54
Side View
1.0
NC (Case)
(Pin Connection)
Anode
Cathode
Bottom View
Anode
Cathode
˙ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25ˆ)
Parameter
Pulsed Radiant Power
Peak Emission Wavelength
Spectral Radiation Half Bandwidth
Forward Voltage
Rise Time
Beam Spread Angle : Parallel
: Vertical
Lasing Threshold Current
Symbol Condition
Пep
IFP=20A
Еp
϶Е
VF
IFP=20A
tr
В FWHM
В˵ IFP=20A
Ith
Min.
20
-
-
-
-
6
29
-
Typ.
-
870
4
6
0.5
8
32
1
Note: General operating conditionПepʽ W, twʽ0 ns, Repetition frequencyʽ kHz
Max.
-
-
-
-
-
10
35
-
Unit
W
nm
nm
V
ns
degree
degree
A
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.˓C 1998 Hamamatsu Photonics K.K.