L6690 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – INFRARED PULSED LASER DIODE

˙FEATURES
˔High duty ratio (DRʽ2.5%)
˔High speed rise time (tr=0.5 ns typ.)



˙APPLICATIONS
˔Laser rader
˔Range finder
˔Excitation light source
˔Optical trigger
˔Security barrier
INFRARED PULSED LASER DIODE
L6690
Figure 1: Dimensional Outline (Unit: mm)
Glass Window
LD Chip
9.0
+0
-0.1
5.7 ʶ 0.2
2.8 ʶ 0.3
˙ABSOLUTE MAXIMUM RATINGS
Parameter
Pulsed Foward Current
Symbol
IFP
Value
3
Reverse Voltage
VR
2
Pulsed Radiant Output Power Пep
3
Pulse Duration (FWHM)
tw
130
Duty Ratio
DR
2.5
Operating Temperature
Top -35 to +80
Storage Temperature
Tstg -40 to +85
Unit
A
V
W
ns
%
ˆ
ˆ
0.45
2.54
Side View
1.0
Common to Case
LD Cathode
PD Anode
Bottom View
(Pin Connection)
PD
LD
LD Cathode
PD Anode
Common to Case
˙ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25ˆ)
Parameter
Pulsed Radiant Power
Peak Emission Wavelength
Spectral Radiation Half Bandwidth
Forward Voltage
Rise Time
Beam Spread Angle : Parallel
: Vertical
Lasing Threshold Current
Monitor PD Current
Symbol Condition
Пep
IFP=2.5A
Еp
϶Е FWHM
VF
IFP=2.5A
tr
В FWHM
В˵ IFP=2.5A
Ith
Im
IFP=2.5A
Min.
1.8
-
-
-
-
6
27
-
-
Typ.
-
870
3
2.7
0.5
8
30
0.5
0.25
Note: General operating conditionПepʽ2 W, twʽ100 ns, Repetition frequencyʽ100 kHz
Max.
-
-
-
-
-
10
33
-
-
Unit
W
nm
nm
V
ns
degree
degree
A
mA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.˓C 1998 Hamamatsu Photonics K.K.