L11854-307-05_15 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – 3 Stack Pulsed Laser Diode

Features
Radiant peak output power: ^>=21 W
Peak emission wavelength: 905 nm
Emitting area size: 70 μm × 10 μm
Applications
Laser range finder
Security
Measuring instruments
3 Stack
Pulsed Laser Diode
L11854-307-05
Absolute maximum ratings (T_op(c) = 25 ℃)
Parameter
Symbol
Value
Unit
Forward current
Ifp
10
A
Reverse voltage
Vr
6
V
Pulse duration
tw
100
ns
Duty ratio
DR
0.075
%
Operating Temperature
Top(c)
-40 to +85
℃
Storage temperature
Tstg
-40 to +100
℃
Electrical and optical characteristics (T_op(c) = 25 ℃)
Parameter
Symbol
Conditions
Min.
Radiant peak output power
Φep
17
Peak emission wavelength
λp
895
Forward voltage
Vop
Ifp = 7 A
—
Spectral radiation half bandwidth Δλ
—
Rise time
tr
—
Parallel
Beam spread angle
θ//
Ifp = 7 A
7
Vertical
θ⊥
FWHM
18
Lasing threshold current
Ith
—
—
Emitting area
—
Value at designing
—
Note: General operating condition: pulse width tw = 50 ns, repetition frequency fr = 1 kHz
Value
Typ.
21
905
11
6
—
11
23
0.4
70 × 10
Max.
—
915
14
10
2
15
28
1
—
Unit
W
nm
V
nm
ns
degree
degree
A
μm × μm
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2015 Hamamatsu Photonics K.K.