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L11767_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – High output power red emitting diode
Red LED
L11767
High output power red emitting diode
The L11767 is a high output red LED that delivers light output more than twice that of our previous products. Electric power
required to provide the same brightness as the previous products is reduced by as much as 70%. The L11767 also offers
high reliability since it is a 4-element (AlGaInP) LED.
Features
High radiant output power (more than twice compared to previous products)
13 mW (IF=20 mA typ.)
High reliability
Applications
Optical switches, etc.
Absolute maximum ratings (Ta=25 °C unless otherwise noted)
Parameter
Symbol
Condition
Value
Unit
Reverse voltage
VR
5
V
Forward current
IF
60
mA
Derating rate of forward
current
Ta > 25 °C
0.8
mA/°C
Pulse forward current
IFP
Pulse width=10 μs
Duty ratio=1%
0.5
A
Derating rate of pulse
forward current
Ta > 25 °C
6.7
mA/°C
Power dissipation
P
180
mW
Operating temperature
Storage temperature
Soldering condition
Topr
Tstg *1
-
-30 to +85
°C
-40 to +100
°C
Less than 260 °C, within 5 seconds *2
-
*1: Guaranteed to resist temperature cycle test of up to 5 cycles
*2: At a position at least 1 mm away from the lead base
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Typ.
Peak emission wavelength λp IF=20 mA
650
660
Spectral half-width
Δλ IF=20 mA
-
18
Forward voltage
VF IF=20 mA
-
2.1
Reverse current
IR VR=5 V
-
-
Radiant flux
φe IF=20 mA
10
13
Cutoff frequency*3
fc IF=20 mA ± 1 mAp-p
3
6
*3: Frequency at which the light output drops by 3 dB relative to the output at 100 kHz
Max.
Unit
670
nm
30
nm
2.5
V
20
μA
-
mW
-
MHz
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