L11649-120-04_15 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – SINGLE EMITTER PULSED LASER DIODE

PRELIMINARY DATA
SINGLE EMITTER
PULSED LASER DIODE
L11649-120-04
FEATURES
Peak Output Power : Fep 20 W
Peak Emission Wavelength : 870 nm ± 10 nm
Emitting Area Size : 200 mm x 1 mm
APPLICATIONS
Laser Range Finder
Security
ABSOLUTE MAXIMUM RATINGS (Top(c) = 25 °C)
Parameter
Symbol
Value
Unit
Pulsed Foward Current
Ifp
Reverse Voltage
Vr
Pulse Duration
tw
Duty Ratio
DR
25
A
2
V
100
ns
0.075
%
Operating Temperature
Top(c)
-40 to +85
°C
Storage Temperature
Tstg
-40 to +100
°C
CHARACTERISTICS (Top(c) = 25 °C)
Parameter
Symbol
Conditions
Pulsed Radiant Power (Peak Power)
F_ep
Forward Voltage
Vf
Peak Emission Wavelength
lp
Spectral Radiation Half Bandwidth
Dl
Rise Time
t_r
Parallel
Beam Spread Angle
q//
Vertical
q^
Lasing Threshold Current
Ith
Emitting Area Size
—
I_fp = 20 A
Ifp = 20 A
FWHM
—
Value at designing
Note: General operating condition:
Pulse Width tw = 50 ns, Repetition frequency fr = 1 kHz
Value
Min.
Typ.
19
22
—
7
860
870
—
4
—
—
7
10
25
30
—
0.8
—
200 ´ 1
Max.
—
—
880
—
2
13
35
—
—
Unit
W
V
nm
nm
ns
degree
degree
A
mm
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.