L11398_15 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – High-Power QCW Laser Diode Stack Module

IFEATURES
GHigh optical power: QCW 100 W/bar
GHigh stability
GLong life
GCompact
IAPPLICATIONS
GMeasuring instrument
GPumping source for solid state laser
GIR illumination for surveillance
GHeat treatment
High-Power QCW Laser Diode
Stack Module
L11398 Series
ISPECIFICATIONS
QCW operation (Max. duty ratio is 1 % (200 µs, 50 Hz))
[Top(hs) = 25 °C]
Parameter
Symbol
Conditions
Value
L11398-16P808 L11398-16P940 L11398-16P980
Unit
Peak emission wavelength
λp
Φep = 1.6 kW
808
Tolerance of λp
—
Φ_ep = 1.6 kW
Spectral radiation bandwidth
∆λ
FWHM
Radiant output power
Φep
Duty to 1 % If = 100 A
Duty to 1 % I_f = 105 A
—
1.6
Forward voltage
Vf
Beam spread Parallel (slow) θ//
angle
Vertical (fast)
θ⊥
FWHM
Lasing threshold current
Ith
Duty to 1 %
23
Expected life time
—
tw = 200 µs
940
±5
4
1.6
—
<32
<10
<40
15
1.0 × 10⁹
980
nm
nm
nm
1.6
—
kW
V
° (degree)
15
A
shot
* Max. No. of Stack 16
* Stack pitch 0.4 mm
ICOOLING CONDITIONS AND SURROUNDINGS
Parameter
Coolant
Operating case temperature
Storage temperature
Description / Value
Unit
Passive cooling (Heat conductive cooling)
—
+5 to +35
°C
-20 to +40
°C
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2012 Hamamatsu Photonics K.K.