L11396_15 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – High-Power QCW Laser Diode Stack Module

IFEATURES
GHigh optical power: QCW 150 W/bar
GHigh stability
GLong life
GCompact
IAPPLICATIONS
GMeasuring instrument
GPumping source for solid state laser
GIR illumination for surveillance
GHeat treatment
High-Power QCW Laser Diode
Stack Module
L11396 Series
ISPECIFICATIONS
QCW operation (Max. duty ratio is 1 % (200 µs, 50 Hz))
[Temperature of coolant (IN): 25 °C, Flow rate : 1.0 L/min]
Parameter
Peak emission wavelength
Tolerance of λp
Spectral radiation bandwidth
Radiant output power
Forward voltage
Beam spread Parallel (slow)
angle
Vertical (fast)
Lasing threshold current
Expected life time
* Max. No. of Stack 75
* Stack pitch 0.4 mm
Symbol
λp
—
∆_λ
Φep
Vf
θ//
θ⊥
Ith
—
Conditions
Value
L11396-50P808 L11396-50P940 L11396-50P980
Unit
Φep = 5 kW, 7.5 kW
808
940
980
nm
Φep = 5 kW, 7.5 kW
±5
nm
FWHM
4
nm
Duty to 1 % If = 105 A
5
—
—
kW
Duty to 1 % I_f = 105 A
—
7.5
7.5
<100
V
FWHM
<10
<40
° (degree)
Duty to 1 %
18
19
19
A
tw = 200 µs
1.0 × 10⁹
shot
ICOOLING CONDITIONS AND SURROUNDINGS
Parameter
Coolant
Temperature of coolant IN
Pressure of coolant (heatsink)
Flow rate (total)
Operating ambient temperature
Storage temperature
Description / Value
Tap water
+15 to +30
0.08 to 0.28
1.0 to 1.8
+15 to +35
-20 to +40
Unit
—
°C
MPa
L/min
°C
°C
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2012 Hamamatsu Photonics K.K.