H7680 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Gated PMT Modules

Gated PMT Modules
H7680/-01
The H7680/-01 PMT modules are capable of high-speed, high-repetition ga-
ted operation. An optimum design in the combination of circuit and photomul-
tiplier tube delivers excellent gating characteristics including a minimum gate
width of 30 ns (H7680-01), 100 kHz repetition rate, and a gate extinction ratio
of 10⁷. The H7680/-01 can operate on a low +15 V supply because of incor-
porating high-voltage power suppy circuit. And, the incorporated PMT gain
can be controled by adjusting the control voltage between +2 V to +5 V.
Product Variations
Type No.
H7680
H7680-01
Spectral Response
300 nm to 650 nm
Normally ON type
Normally OFF type
Features
Specifications
Parameter
Supply Voltage
Max. Input Voltage
Max. Input Current
Max. Surge Current
Effective Area
Peak Sensitivity Wavelength
Pulse Linearity *¹
Max. Output Signal Current
Operating Ambient Temperature
Storage Temperature
Weight
H7680 / H7680-01
+14 to +16
+17
400
4.0
24
420
100
100
+5 to +40
-20 to +50
850
Parameter
H7680 / H7680-01
Photocathode Material
Bialkali
Window Material
Borosilicate glass
Dynode Structure
Linear focused type
Number of Dynodes
10
Cathode Luminous Sensitivity
95
Character- Radiant Sensitivity *²
88
istics
Blue Sensitivity Index (CS 5-58)
11.0
Anode ^{Luminous Sensitivity}
Radiant Sensitivity *²
Character-
istics *¹ Dark Current ^*3
Typ.
Max.
475
4.4 × 10⁵
10
200
Gain *¹
5 × 10⁶
Time *^{1 Rise Time}
1.7
Transit Time
16
Response
TTS
500
*1: Control voltage = +4.5 V
*2: Measured at the peak sensitivity wavelength
*3: Measured when photomultiplier tube operation is ON. After 30 minute storage in darkness
52
Unit
V
V
mA
A
mm
nm
mA
µA
°C
°C
g
Unit
—
—
—
—
µA/lm
mA/W
—
A/lm
A/W
nA
—
ns
ns
ps