H7546B Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – MULTIANODE PHOTOMULTIPLIER TUBE ASSEMBLY

MULTIANODE
PHOTOMULTIPLIER TUBE ASSEMBLY
H7546B
8 mm × 8 mm Multianode, High Speed Response, Low Cross-talk
30 mm Square, Bialkali Photocathode, 12-stage, Head-on Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
Material
Minimum Effective Area
Window Material
Dynode
Structure
Number of Stages
Anode Size
Weight
Suitable Socket (Supplied)
Operating Ambient Temperature
Storage Temperature
Description / Value
300 to 650
420
Bialkali
18.1 × 18.1
Borosilicate glass
Metal channel dynode
12
2×2
Approx. 60
SD-108-T-22, SS-101-T-22, ASP-24307-02
-30 to +50
-30 to +50
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage Between Anode and Cathode
Average Anode Output Current in Total
Description / Value
-1000
23
CHARACTERISTICS (at 25 °C)
Parameter
Cathode Sensitivity
Luminous (2856 K)
Blue Sensitivity Index (CS 5-58)
Quantum Efficiency at 390 nm
Anode Sensitivity
Luminous (2856 K)
Gain
Anode Dark Current per Channel (after 30 min storage in darkness)
Anode Dark Current in Total (after 30 min storage in darkness)
Time Response
Anode Pulse Rise Time
(per channel)
Transit Time Spread (FWHM)
Pulse Linearity per Channel (±5 % deviation)
Cross-talk (with 1 mm optical fiber)
Uniformity Among All Anodes
Min.
60
6.5
—
8
—
—
—
—
—
—
—
—
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
Value
Tye.
80
8.5
21
24
3.0 × 10⁵
0.2
12
1.0
0.3
0.6
2
1: 3
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 ^... Dy9 Dy10 Dy11 Dy12 P
Ratio
32211
1 ^... 1
1125
Supply Voltage: -800 V, K: Cathode, Dy: Dynode, P: Anode
Max.
—
—
—
—
—
2
60
—
—
—
—
1: 5
Unit
nm
nm
—
mm
—
—
—
mm
g
—
°C
°C
Unit
V
µA
Unit
µA/lm
—
%
A/lm
—
nA
nA
ns
ns
mA
%
—
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K.