G9906-01 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – InGaAs PIN photodiode

PHOTODIODE
InGaAs PIN photodiode
G9906-01
Small package InGaAs PIN photodiode for C-L band
G9906-01 is an InGaAs PIN photodiode designed to minimize temperature dependence of the photo sensitivity in the C-L band. It has an active
area of φ0.3 mm and is housed in a subminiature package making it ideal for use in smaller modules.
Features
l C-L band temperature dependence:
±0.2 dB (-10 ˚C to +85 ˚C)
l Small package
l Low dark current: 0.5 nA Max. (VR=5 V)
Applications
l C-L band monitors
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Condition
Reverse voltage
VR Max.
Forward current
IF
Operating temperature
Topr No condensation
Storage temperature
Tstg No condensation
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Active area
-
Spectral response range
λ
10 % or more of
peak sensitivity
Peak sensitivity wavelength
λp
Photo sensitivity
S
λ=1.3 µm
λ=λp
Photo response uniformity
-
λ=1.53 to 1.62 µm,
T= -10 to 85 °C
Dark current
ID
VR=5 V
Cut-off frequency
fc
VR=5 V, RL=50 Ω
-3dB
Terminal capacitance
Ct VR=5 V, f=1 MHz
Shunt resistance
Rsh VR=10 mV
Detectivity
D* λ=λp
Noise equivalent power
NEP λ=λp
Linearity
-
VR=5 V, RL=2 Ω
-55 to +10 dBm
Min.
-
-
-
0.8
0.85
-0.2
-
-
-
-
-
-
-0.15
Value
Unit
20
V
10
mA
-10 to +85
°C
-55 to +125
°C
Typ.
φ0.3
0.9 to 1.7
1.55
0.9
0.95
-
0.2
500
6
1000
5 × 10¹²
4 × 10^-15
-
Max.
-
-
-
-
-
+0.2
0.5
-
8
-
-
-
+0.15
Unit
mm
µm
µm
A/W
dB
nA
MHz
pF
MΩ
cm · Hz^1/2/W
W/Hz^1/2
dB
1