G9845-14 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – GaAs PIN photodiode with preamp

PHOTODIODE
GaAs PIN photodiode with preamp
G9845-14
ROSA type, 850 nm, 1.25 Gbps
Features
l φ1.25 mm sleeve type ROSA (Receiver Optical
Sub-Assembly)
l High-speed response: 1.25 Gbps
l High gain with AGC (Auto Gain Control):
1.6 V/mW (at -20 dBm)
l Low power supply voltage: Vcc=Vpd=3.3 V
l Differential output
l Sensitivity: +2 to -26 dBm
Applications
l Gigabit Ethernet
l Fiber channel
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Supply voltage
Vcc
-0.5, +5
V
Reverse voltage
(photodiode)
VR
7
V
Operating temperature
Topr
-40 to +85 *¹
°C
Storage temperature
Tstg
-40 to +85 *¹
°C
*1: No condensation
s Electrical and optical characteristics
( Ta = 2 5 ° C, V c c = 3. 0 t o 3.6 V, V p d = 3. 0 t o 5. 0 V, Ve e= 0 V, RL=5 0 Ω ^*2, λ=8 5 0 n m , u nl e s s o t h e r w is e n ot ed)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Responsivity
R
0.4
0.5
-
A/W
Photo sensitivity
S
Pin= -20 dBm *³
1.1
1.6
-
V/mW
Supply current
Icc Dark state, RL=∞
-
45
60
mA
Cut-off frequency
fc Pin= -20 dBm, -3 dB
850
1000
-
MHz
Low cut-off frequency
fc-L Pin= -20 dBm, -3 dB
-
3.5
4.5
kHz
Noise equivalent power
NEP Dark state, to 938 MHz *³
-
270
430
nW rms
Trans-impedance
Tz f=100 MHz *³
2.0
3.3
-
kΩ
Minimum receivable
sensitivity
Maximum receivable
sensitivity
Pmin
Pmax
1.25 Gbps, NRZ
PN=23, BER=10^-10
Extinction ratio 10 dB
-
-26
-24
dBm
0
+2
-
Output amplitude
Vomax Differential
-
-
330
mV p-p
Output resistance
Rout
-
50
-
Ω
Dark current
ID Dark state, RL=∞
-
0.05
1
nA
Optical return loss
ORL
12
13.5
-
dB
*2: Output: Capacitive coupling
*3: Single-ended (Vout+) measurement
1