G9230-01_04 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – InGaAs PIN photodiode

PHOTODIODE
InGaAs PIN photodiode
G9230-01
Back-illuminated type, uses package with no wire
Features
l Back-illuminated type
l Easy to handle since there are no wires on chip
(AnSn eutectic bonding)
Optical fibers can be brought closer to the chip
l Miniature package: 2 × 2 × 1 mm
l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm)
l Precise chip position tolerance: ±0.075 mm
Applications
l LD monitor
l Optical fiber communication
s General / Absolute maximum ratings
Parameter
Symbol
Active area
-
Reverse voltage
VR Max.
Operating temperature *
Topr.
Storage temperature *
Tstg.
* In N2 environment or in vacuum
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Spectral response range
λ
Photo sensitivity
S
λ=1.3 µm
λ=1.55 µm
Dark current
ID
VR=5 V
Shunt resistance
Rsh VR=10 mV
Terminal capacitance
Ct VR=5 V, f=1 MHz
Cut-off frequency
fc VR=5 V, RL=50 Ω
Noise equivalent power
NEP λ=λp
value
Unit
φ0.3
mm
10
V
-40 to +85
°C
-40 to +85
°C
Min.
-
-
0.85
-
-
-
-
-
Typ.
0.95 to 1.7
0.85
0.95
0.3
1000
5
400
4 × 10^-15
Max.
-
-
-
1.5
-
-
-
-
Unit
µm
A/W
A/W
nA
MΩ
pF
MHz
W/Hz^1/2
1