G9203-256D_15 Datasheet, PDF (1/9 Pages) Hamamatsu Corporation – Near infrared (0.9 to 1.7 m) image sensors

InGaAs linear image sensors
G9203-256D G9204-512D
Near infrared (0.9 to 1.7 μm) image sensors
The G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared
region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with
an InGaAs photodiode array. Low cost is also achieved by using inexpensive ceramic packages. Feedback capacitance for the
signal processing circuit formed on the CMOS chip can be selected from 10 pF or 0.5 pF by external voltage.
Features
Pixel pitch
G9203-256D: 50 μm
G9204-512D: 25 μm
Low dark current
Room temperature operation
Selectable feedback capacitance (Cf): 10 pF or 0.5 pF
Applications
Near infrared spectroscopy
Foreign matter detection monitors
DWDM monitors
Structure
Parameter
Cooling
Image size
Number of total pixels
Number of effective pixels
Pixel size (H × V)
Pixel pitch
Package
Window material
G9203-256D
G9204-512D
Non-cooled
12.8 × 0.5
256
512
256
512
50 × 500
25 × 500
50
25
22-pin ceramic DIP (See dimensional outlines.)
Borosilicate glass with anti-reflective coating
Unit
-
mm
pixels
pixels
μm
μm
-
-
www.hamamatsu.com
1