G9203-256D Datasheet, PDF (1/5 Pages) Hamamatsu Corporation – InGaAs linear image sensor

IMAGE SENSOR
InGaAs linear image sensor
G9203-256D, G9204-512D
Near infrared (0.9 to 1.7 um) image sensor
G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge
amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low
cost is also achieved by using inexpensive ceramic packages. Feedback capacitance for the signal processing circuit formed on the CMOS chip
can be selected from 10 pF or 0.5 pF by external voltage.
Features
l Element pitch
G9203-256D: 50 µm
G9204-512D: 25 µm
l CMOS readout
l Low dark current
l Room temperature operation
l Selectable feedback capacitance (Cf): 10 pF or 0.5 pF
Applications
l Near infrared spectroscopy
l Foreign matter detection monitors
l DWDM monitors
s Selection guide
Type No.
G9203-256D
G9204-512D
Cooling
Non-cooled
Number
of
pixels
256
512
Pixel pitch
(µm)
50
25
Pixel size
[µm (H) × µm (V)]
50 × 500
25 × 500
Spectral
response range
(µm)
Defective
pixel
0.9 to 1.7 (25 °C)
0
s Absolute maximum ratings
Parameter
Symbol
Value
Unit
Clock pulse voltage
Vφmax.
5.5
V
Operating temperature *
Topr
-40 to +70
°C
Storage temperature *
Tstg
-40 to +85
°C
* Non condensation
s Electrical characteristics (Ta=25°C)
Parameter
Symbol
Supply voltage
Vdd
Supply voltage
Vref
Ground
Vss
Element bias
INP
Clock frequency
f
Clock pulse voltage
High
Low
Vφ
Clock pulse rise/fall times
trφ
tfφ
Clock pulse width
tpwφ
Reset pulse voltage
High
Low
V (RES)
Reset pulse rise/fall times
tr (RES)
tr (RES)
Reset pulse width
tpw (RES)
Video output voltage
High
Low
VH
VL
Date rate
fV
Min.
4.9
-
-
4.4
0.01
4.5
-
0
200
4.5
-
0
6000
-
-
-
Typ.
Max.
Unit
5.0
5.1
V
1.26
-
V
0
-
V
4.5
4.6
V
-
4
MHz
5.0
-
5.5
0.4
V
20
100
ns
-
-
ns
5.0
-
5.5
0.4
V
20
100
ns
-
-
ns
4.4
1.26
INP
-
V
f/8
-
Hz
1