G8941_04 Datasheet, PDF (1/3 Pages) Hamamatsu Corporation – InGaAs PIN photodiode

PHOTODIODE
InGaAs PIN photodiode
G8941 series
Sub-mount type photodiode for LD monitor
Features
l Active area
G8941-01: φ1 mm
G8941-02: φ0.5 mm
G8941-03: φ0.3 mm
l Miniature package: 2 × 2 × 1 mm
l Precise chip position tolerance: ±0.075 mm
Applications
l LD monitor
I General rating
Parameter
Active area
G8941-01
f1
G8941-02
f0.5
G8941-03
Unit
f0.3
mm
I Absolute maximum ratings
Parameter Symbol Remark
Reverse voltage
VR
Max.
Operating
temperature
Storage
temperature
Topr
*
Tstg
* In N environment or in vacuum
G8941-01
10
G8941-02
20
-40 to +85
-55 to +125
G8941-03
Unit
20
V
°C
°C
I Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol Condition
G8941-01
Min. Typ. Max.
Spectral
response range
l
0.9 to 1.7
Photo sensitivity
S
l=1.31 µm 0.8 0.9
-
l=1.55 µm 0.85 0.95 -
Dark current
ID VR=5 V
-
1
5
Shunt resistance Rsh VR=10 mV
-
100 -
Terminal
capacitance
Ct
VR=5 V,
f=1 MHz
-
90
-
Cut-off
frequency
fc
VR=5 V,
RL=50 W
-
35
-
Noise equivalent
power
NEP
l=lp
2 × 10^-14
Detectivity
D* l=lp
5 × 10¹²
G8941-02
Min. Typ. Max.
0.9 to 1.7
0.8 0.9
-
0.85 0.95 -
-
0.5 2.5
- 300 -
-
12
-
- 200 -
8 × 10^-15
5 × 10¹²
G8941-03
Min. Typ. Max.
0.9 to 1.7
0.8 0.9
-
0.85 0.95 -
-
0.3 1.5
- 1000 -
-
5
-
- 400 -
4 × 10^-15
5 × 10¹²
Unit
µm
A/W
nA
MW
pF
MHz
W/Hz^1/2
cmHz^1/2/W
1