G8931-20 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – InGaAs APD

PHOTODIODE
InGaAs APD
G8931-20
Large active area: φ0.2 mm, high-speed response: 0.9 GHz
G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its
large active area of φ0.2 mm, G8931-20 provides high-speed response (typical cut-off frequency 0.9 GHz at M=10).
Features
l Active area: φ0.2 mm
l Low voltage operation
l Low capacitance
l High sensitivity
l Low dark current
Applications
l Distance measurement
l Spatial light transmission
l OTDR
l Low-light-level detection
s General ratings
P aram eter
Symbol
Va lu e
Unit
Active area
-
φ0.2
mm
s Absolute maximum ratings
P aram eter
Symbol
Va lu e
Unit
Forward current
IF
2
mA
Reverse current
IR
500
µA
Operating temperature
To p r
-40 to +85
°C
Storage temperature
Tstg
-55 to +125
°C
s Electrical and optical characteristics (Ta=25 °C)
P aram eter
Symbol
Condition
Spectral response range
λ
Peak sensitivity wavelength
λp
Photo sensitivity
S
λ=1.55 µm, M=1
Breakdown voltage
VBR
ID=100 µA
Tem perature coefficient of VBR
Γ
-40 to +85 °C
Dark current
ID
VR=VBR × 0.9
Cut-off frequency
fc
M=10
Term inal capacitance
Ct
VR=VBR × 0.9
f=1 MHz
s Spectral response
(Typ. Ta=25 ˚C, M=1)
1.0
Min.
-
-
0.8
40
-
-
0.6
-
Ty p .
0.9 to 1.7
1.55
0.9
-
0 . 11
150
0.9
1.5
Max.
-
-
-
60
0.16
200
-
2
s Dark current vs. reverse voltage
1 mA
(Typ. Ta=25 ˚C)
Unit
µm
µm
A /W
V
V/°C
nA
GHz
pF
100 µA
PHOTOCURRENT
0.8
10 µA
1 µA
0.6
100 nA
10 nA
DARK CURRENT
0.4
1 nA
0.2
100 pA
10 pA
0
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1 pA
0
10
20
30
40
50
WAVELENGTH (µm)
KAPDB0120EA
REVERSE VOLTAGE (V)
KAPDB0121EA
1