G8931-04 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – InGaAs APD

PHOTODIODE
InGaAs APD
G8931-04
Time response characteristics compatible with SONET and G/GE-PON
G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET
(Synchronous Optical Network), G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).
Features
l High-speed response: 2.5 Gbps
l Low dark current
l Low capacitance
l Active area: φ0.04 mm
l High sensitivity
s General ratings
Parameter
Active area
Symbol
-
Applications
l Optical fiber communications
l High-speed data links
Value
Unit
φ0.04
mm
s Absolute maximum ratings
Parameter
Symbol
Value
Unit
Forward current
IF
2
mA
Reverse current
IR
500
µA
Operating temperature
Topr
-40 to +85
°C
Storage temperature
Tstg
-55 to +125
°C
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Spectral response range
λ
Peak sensitivity wavelength
λp
Photo sensitivity
S
λ=1.55 µm, M=1
Breakdown voltage
VBR
ID=100 µA
Temperature coefficient of VBR
Γ
-40 to +85 °C
Dark current
ID
VR=VBR × 0.9
Cut-off frequency
fc
M=10
Terminal capacitance
Ct
VR=VBR × 0.9
f=1 MHz
s Spectral response
1.0
(Typ. Ta=25 ˚C, M=1)
Min.
-
-
0.8
40
-
-
3
-
Typ.
0.9 to 1.7
1.55
0.9
-
0.11
40
4
0.35
Max.
-
-
-
60
0.16
65
-
0.45
s Dark current vs. reverse voltage
1 mA
(Typ. Ta=25 ˚C)
Unit
µm
µm
A/W
V
V/°C
nA
GHz
pF
100 µA
0.8
10 µA
PHOTOCURRENT
1 µA
0.6
100 nA
10 nA
0.4
DARK CURRENT
1 nA
0.2
100 pA
10 pA
0
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1 pA
0
10
20
30
40
50
WAVELENGTH (µm)
KAPDB0120EA
REVERSE VOLTAGE (V)
KAPDB0123EA
1