G8921-01 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – GaAs PIN photodiode array

PHOTODIODE
GaAs PIN photodiode array
G8921-01
Photodiode array for data communication
Features
Applications
l Active area: φ0.06 mm
Element pitch: 250 µm
l Optical fiber communications
l High-speed data link
4-element array
l High-speed response: 10 Gbps [(2.5 Gbps per channel) ×4]
at low bias voltage (VR=2 V)
l Low dark current, low capacitance
l Up to 16 elements available as option
I General ratings
Parameter
Symbol
Value
Unit
Active area
-
f0.06
mm
Element pitch
-
250
µm
Number of elements
-
4
ch
I Absolute maximum ratings
Parameter
Symbol Remark
Value
Unit
Reverse voltage
VR Max.
30
V
Reverse current
IR Max.
0.5
mA
Operating temperature
Storage temperature
Topr
Tstg
*
-40 to +85
°C
-55 to +125
°C
* In N2 environment or in vacuum
I Electrical and optical characteristics (Unless other wise, Ta=25 °C, per 1 element)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
l
-
470 to 870
-
nm
Peak sensitivity wavelength
lp
-
850
-
nm
Photo sensitivity
S
l=850 nm
0.45
0.5
-
A/W
Dark current
ID
VR=5 V
-
2
50
pA
Terminal capacitance
Ct
VR=2 V, f=1 MHz
-
0.35
0.5
pF
Cut-off frequency
fc
l=850 nm, VR=2 V,
RL=50 W, -3 dB
2
-
-
GHz
1