G8909-01_15 Datasheet, PDF (1/3 Pages) Hamamatsu Corporation – InGaAs PIN photodiode array

InGaAs PIN photodiode array
G8909-01
Photodiode array for DWDM monitor
Features
250 μm pitch, 40 ch parallel readout
Low crosstalk
Precise chip position tolerance: ±0.05 mm
Applications
DWDM monitor with AWG
Structure
Parameter
Photosensitive area
Pixel pitch
Number of elements
Value
Unit
φ0.08
mm
250
μm
40
ch
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Reverse voltage
VR max
6
V
Incident light level
Pin
10
mW
Operating temperature
Topr
-40 to +85*
°C
Storage temperature
Tstg
-40 to +85*
°C
* In N2 environment or in vacuum
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Spectral response range
Photosensitivity
Photoresponse nonuniformity
Dark current
Shunt resistance
Terminal capacitance
Crosstalk
Symbol
λ
S
PRNU
ID
Rsh
Ct
-
Condition
λ=1.31 μm
λ=1.55 μm
VR=5 V
VR=10 mV
VR=5 V, f=1 MHz
VR=0.1 V
Min.
Typ.
Max.
Unit
-
0.9 to 1.7
-
μm
0.8
0.9
0.85
0.95
-
A/W
-
-
-
±5
%
-
0.02
0.2
nA
-
8
-
GΩ
-
1.4
-
pF
-
-33
-
dB
The G8909-01 may be damaged by Electro Static Discharge, etc. Be carefull when using the G8909-01.
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