G8909-01 Datasheet, PDF (1/3 Pages) Hamamatsu Corporation – InGaAs PIN photodiode array

PHOTODIODE
InGaAs PIN photodiode array
G8909-01
Photodiode array for DWDM monitor
Features
l 250 µm pitch, 40 ch parallel readout
l Low cross-talk
l Precise chip position tolerance: ±0.05 mm
Applications
l DWDM monitor with AWG
I General ratings
Parameter
Active area
Pixel pitch
Number of elements
Value
Unit
f0.08
mm
250
µm
40
ch
I Absolute maximum ratings
Parameter
Symbol
Reverse voltage
VR Max.
Allowable input power
Pin Max.
Operating temperature
Storage temperature
Topr
Tstg
*
* In N environment or in vacuum
Remark
Value
Unit
6
V
10
mV
-40 to +85
°C
-40 to +85
°C
I Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
l
-
0.9 to 1.7
-
µm
Photo sensitivity
S
l=1.31 µm
l=1.55 µm
0.8
0.9
0.85
0.95
-
-
A/W
Photo response non-uniformity PRNU
-
-
±5
%
Dark current
ID
VR=5 V
-
0.02
0.2
nA
Shunt resistance
Rsh VR=10 mV
-
8
-
GW
Terminal capacitance
Ct
VR=5 V, f=1 MHz
-
1.4
-
pF
Cross-talk
-
VR=0.1 V
-
-33
-
dB
1