G8605_15 Datasheet, PDF (1/5 Pages) Hamamatsu Corporation – InGaAs PIN photodiodes

InGaAs PIN photodiodes
G8605 series
Thermoelectrically cooled NIR (near infrared)
detector with low noise and high-speed response
InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and
very low noise. The G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark cur-
rent to achieve high D^∗. One-stage (-10 °C) and two-stage (-20 °C) thermoelectrically cooled types are provided.
Features
High-speed response
Low noise
Various active area sizes available from φ1 to φ5 mm
Applications
Optical power meter
Water content analyzer
Laser diode life test
Accessories (Optional)
Preamp for InGaAs PIN photodiode
C4159-03
Heatsink for one-stage TE-cooled type A3179
Heatsink for two-stage TE-cooled type A3179-01
Temperature controller for TE-cooled type C1103-04
Specifications / Absolute maximum ratings
Type No.
G8605-11
G8605-12
G8605-13
G8605-15
G8605-21
G8605-22
G8605-23
G8605-25
Dimensional
outline/
Window
material *
Package
Cooling
/K
One-stage
TE-cooled
TO-8
/K
Two-stage
TE-cooled
Active
area
(mm)
φ1
φ2
φ3
φ5
φ1
φ2
φ3
φ5
Thermistor
power
dissipation
(mW)
0.2
Absolute maximum ratings
TE-cooler Reverse Operating
allowable voltage temperature
current VR Max.
Topr
(A)
(V)
(°C)
5
1.5
5
5
2
5
-40 to +70
1.0
5
5
2
* Window material K: borosilicate glass with anti-reflective coating (1.55 μm peak)
Storage
temperature
Tstg
(°C)
-55 to +85
Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
G8605-11
G8605-12
G8605-13
G8605-15
G8605-21
G8605-22
G8605-23
G8605-25
Measurement
condition
Element
temperature
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
Photo
sensitivity
S
Dark current
ID
VR=1 V
(°C)
-10
-20
(μm)
0.9 to 1.67
0.9 to 1.65
(μm)
1.55
1.3 μm λ=λp
(A/W) (A/W)
0.9 0.95
Typ.
(nA)
0.07
0.3
1
2.5
0.03
0.15
0.5
1.2
Max.
(nA)
0.35
1.5
5
12.5
0.15
0.75
2.5
6
Cut-off
frequency
fc
VR=1 V
RL=50 Ω
(MHz)
18
4
2
0.6
18
4
2
0.6
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
resistance
Rsh
VR=10 mV
D^∗
λ=λp
NEP
λ=λp
(pF)
150
550
1000
3500
150
550
1000
3500
(MΩ)
1500
300
100
30
3000
600
200
60
(cm·Hz^1/2/W)
2 × 10¹³
3 × 10¹³
(W/Hz^1/2)
5 × 10^-15
1 × 10^-14
2 × 10^-14
3 × 10^-14
3 × 10^-15
7 × 10^-15
1 × 10^-14
2 × 10^-14
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