G8605 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – InGaAs PIN photodiode

PHOTODIODE
InGaAs PIN photodiode
G8605 series
Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response
InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D*. One-stage (-10 ˚C)
and two-stage (-20 ˚C) thermoelectrically cooled types are provided.
Features
l High-speed response
l Low noise
l Various active area sizes available from φ1 to φ5 mm
Applications
l Optical power meter
l Water content analyzer
l Laser diode life test
s Specifications / Absolute maximum ratings
Type No.
D im ensional
outline/
W indow
Package
m aterial *
Cooling
G8605-11
G8605-12
G8605-13
G8605-15
G8605-21
G8605-22
G8605-23
G8605-25
➀/K
One-stage
TE-cooled
TO-8
➁/K
Two-stage
TE-cooled
Active
area
(mm)
φ1
φ2
φ3
φ5
φ1
φ2
φ3
φ5
Accessories (Optional)
l Preamp for InGaAs PIN photodiode
C4159-02
(High-speed type)
l Preamp for InGaAs PIN photodiode
C4159-03
(High sensitivity type)
l Heatsink for one-stage TE-cooled type A3179
l Heatsink for two-stage TE-cooled type A3179-01
l Temperature controller for TE-cooled type C1103-04
Thermistor
power
dissipation
(mW)
0.2
Absolute maximum ratings
TE-cooler Reverse Operating Storage
allowable voltage temperature temperature
current VR Max. Topr
Tstg
(A)
(V)
(°C)
(°C)
5
1.5
5
5
2
5
-40 to +70 -55 to +85
1.0
5
5
2
s Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
G8605-11
G8605-12
G8605-13
G8605-15
G8605-21
G8605-22
G8605-23
G8605-25
M eas urem ent
condition
S
re
pectral
sponse
Peak
sensitivity
Element ran ge w avelength
temperature λ
λp
Photo
sensitivity
S
1.3 µ m λ=λp
(°C) (µm) (µm) (A /W ) (A /W )
-10 0.9 to 1.67
1.55 0.9 0.95
-20 0.9 to 1.65
Dark current
ID
VR=1 V
Typ. Max.
(nA) (nA)
0.07 0.35
0.3 1.5
15
2.5 12.5
0.03 0.15
0.15 0.75
0.5 2.5
1.2 6
Cut-off
frequency
fc
VR=1 V
RL=50 Ω
(MHz)
18
4
2
0.6
18
4
2
0.6
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
resistance
Rsh
VR=10 mV
D^∗
λ=λp
NEP
λ=λp
(pF)
150
550
1000
3500
150
550
1000
3500
(MΩ)
1500
300
100
30
3000
600
200
60
(cm ·H z^1/2/W ) (W/Hz^1/2)
5 × 10^-15
2 × 10¹³
1 × 10^-14
2 × 10^-14
3 × 10^-14
3 × 10^-15
3 × 10¹³
7 × 10^-15
1 × 10^-14
2 × 10^-14
* Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)
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