G8522 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – GaAs PIN photodiode

PHOTODIODE
GaAs PIN photodiode
G8522 series
High-speed response at low reverse voltage
G8522 series are high-speed PIN photodiodes developed for optical communications and are capable of GHz (gigahertz) operation even at a low
reverse voltage (2 V or less). Please contact our sales office with your specific needs.
Features
l High-speed response at low reverse voltage
G8522-01: 3 GHz Min. (VR=2 V)
G8522-02: 1.9 GHz Min. (VR=2 V)
G8522-03: 1.5 GHz Min. (VR=2 V)
l Low noise, low dark current
l Low terminal capacitance
Applications
l Optical fiber communications
l Fiber channels
l Gigabit Ethernet
s Absolute maximum ratings (Ta=25 °C)
Parameter Symbol
Value
Unit
Reverse voltage VR Max.
30
V
Operating
temperature
Topr
-40 to +85
°C
Storage
temperature
Tstg
-55 to +125
°C
s Electrical and optical characteristics (Ta=25 °C)
Parameter Symbol
Condition
G8522-01
Min. Typ. Max.
Active area size
-
-
φ40
-
Spectral
response range
λ
Peak sensitivity
wavelength
λp
-
470 to
870
-
-
850
-
Photo sensitivity S λ=850 nm
0.45 0.5
-
Dark current
ID VR=5 V
-
2
50
Terminal
capacitance
Ct VR=2 V, f=1 MHz -
0.3 0.45
Cut-off
frequency
fc
VR=2 V, RL=50 Ω
λ=850 nm, -3 dB
3
-
-
G8522-02
Min. Typ. Max.
-
φ80
-
-
470 to
870
-
-
850
-
0.45 0.5
-
-
8 200
- 0.45 0.65
1.9
-
-
G8522-03
Min. Typ. Max.
- φ120 -
470 to
870
-
850
-
0.45 0.5
-
-
20 500
-
0.8 1.2
1.5
-
-
Unit
µm
nm
nm
A/W
pA
pF
GHz
1