G8423 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – InGaAs PIN photodiode

PHOTODIODE
InGaAs PIN photodiode
G8423/G8373/G5853 series
Long wavelength type (up to 2.6 µm)
Features
l Long cut-off wavelength: 2.6 µm
l 3-pin TO-18 package: low price
l Thermoelectrically cooled TO-8 package: low dark current
l Active area: φ0.3 to φ3 mm
Applications
l Gas analysis
l Spectrophotometer
l NIR (near infrared) photometry
s Specifications / Absolute maximum ratings
Type No.
D im e n sio n a l
outline
Package
Cooling
G8423-03
G8423-05
G8373-01
G8373-03
G5853-103
G5853-11
G5853-13
G5853-203
G5853-21
G5853-23
➀
TO-18
Non-cooled
➁
TO-5
➂
TO-8
One-stage
TE-cooled
➃
TO-8
Two-stage
TE-cooled
Active
area
(mm)
φ0.3
φ0.5
φ1
φ3
φ0.3
φ1
φ3
φ0.3
φ1
φ3
Thermistor
power
dissipation
(mW)
Absolute maximum ratings
TE-cooler Reverse Operating Storage
allowable voltage temperature temperature
current
VR
Topr
Tstg
(A)
(V)
(°C)
(°C)
-
-
-40 to +85 -55 to +125
2
1.5
0.2
-40 to +70 -55 to +85
1.0
s Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
Measurement
condition
Spectral
response
Peak
sensitivity
Photo
sensitivity
Element range w a ve len gth S
temperature λ
λp
λ=λp
Dark current
ID
VR=1 V
Cut-off
frequency
fc
VR=1 V
RL=50 Ω
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
resistance
Rsh
VR=10 mV
D^∗
λ=λp
NEP
λ=λp
G8423-03
Typ. Max. -3 dB
(°C)
(µm)
(µm)
(A/W) (µA) (µA) (MHz) (pF)
(kΩ) (cm ·H z^1/2/W ) (W/Hz^1/2)
2
20
60
40
30
7 × 10^-13
G8423-05
G8373-01
25 1.2 to 2.6
5
50
15
75
50
15
60
200
15
3
5 × 10¹⁰
1 × 10^-12
2 × 10^-12
G8373-03
150 1500 1.5
1800
0.3
8 × 10^-12
G5853-103
G5853-11
2.3
-10 1.2 to 2.57
0.2
2
60
40
300
3 × 10^-13
1.1
1.5 7.5
15
200
30
1 × 10¹¹ 7 × 10^-13
G5853-13
15 150
1.5
1800
3
2 × 10^-12
G5853-203
0.1
1
60
40
600
2 × 10^-13
G5853-21
-20 1.2 to 2.55
0.8
4
15
200
60
2 × 10¹¹ 5 × 10^-13
G5853-23
7.5 75
1.5
1800
6
1.8 × 10^-12
1