G8422 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – InGaAs PIN photodiode

PHOTODIODE
InGaAs PIN photodiode
G8422/G8372/G5852 series
Long wavelength type (up to 2.1 µm)
Features
l Cut-off wavelength: 2.1 µm
l 3-pin TO-18 package: low price
l TE-cooled type TO-8 package: low dark current
l Active area: B0.3 to B3 mm
Applications
l Gas analyzer
l Water content analyzer
l NIR (Near Infrared) photometry
s Specifications / Absolute maximum ratings
Type No.
D im e n s io n a l
outline
Package
Cooling
G8422-03
G8422-05
G8372-01
G8372-03
G5852-103
G5852-11
G5852-13
G5852-203
G5852-21
G5852-23
➀
TO-18
Non-cooled
➁
TO-5
➂
TO-8
One-stage
TE-cooled
➃
TO-8
Two-stage
TE-cooled
Active
area
(mm)
φ0.3
φ0.5
φ1
φ3
φ0.3
φ1
φ3
φ0.3
φ1
φ3
Thermistor
power
dissipation
(mW)
Absolute maximum ratings
TE-cooler Reverse Operating Storage
allowable voltage temperature temperature
current
VR
Topr
Tstg
(A)
(V)
(°C)
(°C)
-
-
-40 to +85 -55 to +125
1.5
2
0.2
-40 to +70 -55 to +85
1.0
s Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
Measurement
condition
Element
Te m pe ra tu re
T
Spectral
response
range
λ
Peak Photo
sensitivity sensitivity
wavelength S
λp
λ=λp
Dark current
ID
VR=1 V
Cut-off
frequency
fc
VR=1 V
RL=50 Ω
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
resistance
Rsh
VR=10 mV
D^∗
λ=λp
NEP
λ=λp
G8422-03
Typ. Max.
(°C)
(µm)
(µm)
(A/W) (nA) (nA) (MHz) (pF)
(MΩ) (cm ·H z^1/2/W ) (W/Hz^1/2)
55 550 100
8
0.9
1.5 × 10^-13
G8422-05
G8372-01
25 0.9 to 2.1
125 1250 80
500 5000 40
20
80
0.3
0.1
2.5
×
10¹¹
2.5 × 10^-13
4 × 10^-13
G8372-03
5 (µA) 50 (µA) 3
800
0.01
1.5 × 10^-12
G5852-103
5.5 55
100
8
G5852-11
-10 0.9 to 2.07 ^1.95
1.2
50 500
40
80
9
5 × 10^-14
1
8 × 10¹¹ 1 × 10^-13
G5852-13
500 5000
3
800
0.1
4 × 10^-13
G5852-203
3
30
100
8
18
3 × 10^-14
G5852-21
-20 0.9 to 2.05
25 250
40
80
2
1.2 × 10¹² 8 × 10^-14
G5852-23
250 2500
3
800
0.2
3 × 10^-13
1