G8421 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – InGaAs PIN photodiode

PHOTODIODE
InGaAs PIN photodiode
G8421/G8371/G5851 series
Long wavelength type
Features
Applications
l Long cut-off wavelength: 1.9 µm
l Optical power meter
l 3-pin TO-18 package: low price
l Gas analyzer
l l Thermoelectrically cooled TO-18 package: low dark current NIR (near infrared) photometry
l Active area: φ0.3 to φ3 mm
I Specifications / Absolute maximum ratings
Type No.
Dimensional
outline/
Window
Package
material
Cooling
G8421-03
G8421-05
G8371-01
G8371-03
G5851-103
G5851-11
G5851-13
G5851-203
G5851-21
G5851-23
➀
TO-18 _Non-cooled
➁
TO-5
➂
TO-8
One-stage
TE-cooled
➃
TO-8
Two-stage
TE-cooled
Active
area
(mm)
f0.3
f0.5
f1
f3
f0.3
f1
f3
f0.3
f1
f3
Thermistor
power
dissipation
(mW)
Absolute maximum ratings
TE-cooler Reverse Operating Storage
allowable voltage temperature temperature
current
VR
Topr
Tstg
(A)
(V)
(°C)
(°C)
-
-
-40 to +85 -55 to +125
1.5
2
0.2
-40 to +70 -55 to +85
1.0
I Electrical and optical characteristics (Typ. unless otherwise noted)
Type No.
Measurement
Condition
Spectral
response
Peak Photo
sensitivity sensitivity
Element range wavelength S
temperature
l
lp
l=lp
Dark current
ID
VR=1 V
Cut-off
frequency
fc
VR=1 V
RL=50 W
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
resistance
Rsh
V4=10 mV
D^*
l=lp
NEP
l=lp
Typ. Max. -3 dB
(°C)
(µm)
(µm)
(A/W) (nA) (nA) (MHz) (pF)
(MW) (cm·Hz^1/2/W) (W/Hz^1/2)
G8421-03
30 300 100
8
1.5
9 × 10^-14
G8421-05
G8371-01
25 0.9 to 1.9
50 500
80
100 1000 40
20
80
1
0.5
5 × 10¹¹
1.5 × 10^-13
2 × 10^-13
G8371-03
2000 20000 3
800
0.05
8 × 10^-13
G5851-103
G5851-11
-10 0.9 to 1.87 ^1.75
1.1
3
30
100
10 100
40
8
80
15
3 × 10^-14
5
1.5 × 10¹² 6 × 10^-14
G5851-13
200 2000
3
800
0.5
2 × 10^-13
G5851-203
1.5 15
100
8
35
2 × 10^-14
G5851-21
-20 0.9 to 1.85
5
50
40
80
10 2.5 × 10¹² 4 × 10^-14
G5851-23
100 1000
3
800
1
1.5 × 10^-13
1