G8370-81 Datasheet, PDF (1/3 Pages) Hamamatsu Corporation – InGaAs PIN photodiode

PHOTODIODE
InGaAs PIN photodiode
G8370-81/-82/-83/-85
Low PDL (Polarization Dependence Loss)
InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low
noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
Features
l Low PDL (Polarization Dependence Loss)
l Low noise, low dark current
l Large active area
l Various active area sizes available
Applications
l Laser monitor
l Optical power meter
l Laser diode life test
s Specifications / Absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *¹
Package
G8370-81
G8370-82
G8370-83
G8370-85
➀/K
TO-18
➁/K
TO-5
➂/K
TO-8
Active area
(mm)
φ1
φ2
φ3
φ5
Absolute maximum ratings
Reverse
Operating
Storage
voltage
temperature
temperature
VR Max.
Topr
Tstg
(V)
(°C)
(°C)
5
2
-40 to +85
-55 to +125
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s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
G8370-81
Spectral
response
range
Peak
sensitivity
wavelength
λp
Photo
sensitivity
S
1.3 µm λ=λp
Dark
current
ID
VR=1 V
Cut-off
frequency
fc
VR=1 V
RL=50 Ω
-3 dB
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
resistance
Rsh
VR=10 mV
PDL
λ=λp
D^∗
λ=λp
NEP
λ=λp
Min. Typ. Min. Typ. Typ. Max.
Typ. Max.
(µm) (µm) (A/W) (A/W) (A/W) (A/W) (nA) (nA) (MHz) (pF) (MΩ) (mdB) (mdB) (cm· Hz^1/2/W) (W/Hz^1/2)
15
35
90
100
2 × 10^-14
G8370-82
G8370-83
5 25
4
0.9 to 1.7 1.55 0.8 0.9 0.85 1.1 _{15 75}
2
550
1000
25
10
5
10
5 × 10¹²
4 × 10^-14
6 × 10^-14
G8370-85
25 *² 125 *² 0.6
3500
3
1 × 10^-13
*1: Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)
*2: VR=0.1 V
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