G8370-10 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – InGaAs PIN photodiode

PHOTODIODE
InGaAs PIN photodiode
G8370-10
Ceramic package with large active area (φ10 mm)
Features
l Large active area: φ10 mm
l High sensitivity: 0.95 A/W Typ. (λ=1.55 µm)
l Low dark current
l Low PDL: 5 mdB Typ., 10 mdB Max.
l Photo response non-uniformity: ±2 % Typ.
Applications
l LD power monitor
l LD aging equipment
I General / Absolute maximum ratings
Parameter
Symbol
Active area
-
Reverse voltage
VR Max.
Operating temperature
Topr.
Storage temperature
Tstg.
* No condensation
I Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Spectral response range
l
Peak sensitivity wavelength
lp
Photo sensitivity
S
l=1.3 µm
l=lp
Dark current
ID VR=10 mV
Shunt resistance
Rsh VR=10 mV
Terminal capacitance
Ct VR=0 V, f=1 MHz
Cut-off frequency
fc VR=0 V, RL=50 W
Noise equivalent power
NEP l=lp
Detectivity
D* l=lp
Photo response non-uniformity PRNU 80 % of active area
PDL
-
VR=0 V, l=1.55 µm
Value
f10
1
-25 to +70 *
-25 to +70 *
Min.
-
-
0.8
0.85
-
5
-
-
-
-
-
-
Typ.
0.9 to 1.7
1.55
0.85
0.95
0.2
50
20
100
6 × 10^-13
1.5 × 10¹²
±2
5
Max.
-
-
-
-
2
-
-
-
-
-
-
10
Unit
mm
V
°C
°C
Unit
µm
µm
A/W
A/W
µA
kW
nF
kHz
W/Hz^1/2
cm·Hz^1/2/W
%
mdB
PRELIMINARY DATA
Jan. 2003
1