G7150 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – InGaAs PIN photodiode array

PHOTODIODE
InGaAs PIN photodiode array
G7150/G7151-16
16-element array
Features
l 16-element array
l For simple measurement
Applications
l Near Infrared (NIR) spectrophotometer
s General ratings
Parameter
Package
Active area
G7150-16
G7151-16
Unit
DIP
-
0.45 × 1 (× 16 elements)
0.08 × 0.2 (× 16 elements)
mm
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR
5
V
Operating temperature Topr
-25 to +70
°C
Storage temperature
Tstg
-25 to +70
°C
s Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Symbol Condition
G7150-16
Min.
Typ.
Spectral response range λ
- 0.9 to 1.7
Peak sensitivity w avelength λp
-
1.55
Photo sensitivity
S ^{λ=1.3 µm}
0.9
λ=1.55 µm
0.95
Dark current
ID VR=1 V
-
5
Cut-off frequency
fc
VR=1 V, RL=50 Ω
λ=1.3 µm, -3 dB
-
30
Terminal capacitance
Ct VR=1 V, f=1 MHz
-
100
Shunt resistance
Rsh VR=10 mV
-
100
Detectivity
Noise equivalent power
D^∗ λ=λp
NEP λ=λp
-
5 × 10¹²
-
2 × 10^-14
Max.
-
-
-
-
25
-
-
-
-
-
G7151-16
Min.
Typ. Max.
Unit
- 0.9 to 1.7 -
µm
-
1.55
-
µm
0.9
-
A/W
0.95
-
-
0.2
1
nA
-
300
-
MHz
-
10
-
pF
-
1000
-
MΩ
-
5 × 10¹²
-
cm·Hz^1/2/W
-
3 × 10^-15
-
W/Hz^1/2
1