G7150-16_15 Datasheet, PDF (1/5 Pages) Hamamatsu Corporation – InGaAs PIN photodiode arrays

InGaAs PIN photodiode arrays
G7150/G7151-16
Features
16-element arrays
For simple measurement
16-element arrays
Applications
Near infrared (NIR) spectrophotometers
Structure
Parameter
Photosensitive area
Element pitch
Number of elements
Package
Window material
G7150-16
G7151-16
Unit
0.45 × 1
0.08 × 0.2
mm
0.5
0.1
mm
16
-
18-pin DIP
-
Borosilicate glass
-
Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR
5
V
Operating temperature* Topr
-25 to +70
°C
Storage temperature*
Tstg
-25 to +70
°C
Soldering conditions
-
260 °C or less, within 5 s
-
* No condensation
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Dark current
Temperature coefficient of ID
Cutoff frequency
Terminal capacitance
Shunt resistance
Detectivity
Noise equivalent power
Symbol
λ
λp
S
ID
ΔTID
fc
Ct
Rsh
D*
NEP
Condition
λ=1.3 μm
λ=λp
VR=1 V
VR=1 V
VR=1 V, RL=50 Ω
λ=1.3 μm, -3 dB
VR=1 V, f=1 MHz
VR=10 mV
λ=λp
λ=λp
G7150-16
Min.
Typ.
Max.
-
0.9 to 1.7
-
-
1.55
-
0.8
0.9
-
0.85
0.95
-
-
5
25
-
1.09
-
10
30
-
-
10
1 × 10¹²
-
100
100
5 × 10¹²
2 × 10-¹⁴
200
-
-
5 × 10^-14
G7151-16
Min.
Typ.
Max.
-
0.9 to 1.7
-
-
1.55
-
0.8
0.9
-
0.85
0.95
-
-
0.2
1
-
1.09
-
Unit
μm
μm
A/W
nA
times/°C
100
300
-
MHz
-
100
1 × 10¹²
-
10
1000
5 × 10¹²
3 × 10^-15
20
-
-
2 × 10^-14
pF
MΩ
cm∙Hz^1/2/W
W/Hz^1/2
The G7150/G7151-16 may be damaged by electrostatic discharge, etc. Be carefull when using the G7150/G7151-16.
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