G6849 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – InGaAs PIN photodiode

PHOTODIODE
InGaAs PIN photodiode
G6849 series
Quadrant type
Features
l Active area
G6849 : B2 mm quadrant element
G6849-01: B1 mm quadrant element
l Low noise
l High reliability
Applications
l Spot light position detection
l Measurement equipment
s General ratings
Parameter
Package
Active area
G6849
φ2/quadrant
TO-5
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Reverse voltage
VR
Operating temperature
Topr
Storage temperature
Tstg
Value
5
-40 to +85
-55 to +125
s Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Symbol
Condition
G6849
Min. Typ.
Spectral response range
λ
- ^{0.9 to 1.7}
Peak sensitivity wavelength _λp
-
1.55
Photo sensitivity
S ^{λ=1.3 µm}
λ=1.55 µm
0.9
0.95
Dark current
ID VR=1 V
-
0.5
Cut-off frequency
fc
VR=1 V, RL=50 Ω
λ=1.3 µm, -3 dB
-
30
Terminal capacitance
Ct VR=1 V, f=1 MHz
-
100
Shunt resistance
Rsh VR=10 mV
-
50
Detectivity
D^∗ λ=λp
-
5 × 10¹²
Noise equivalent power NEP λ=λp
-
2 × 10^-14
Max.
-
-
-
-
5
-
-
-
-
-
G6849-01
Unit
-
φ1/quadrant
mm
Unit
V
°C
°C
G6849-01
Unit
Min.
Typ.
Max.
- ^{0.9 to 1.7} -
µm
-
1.55
-
µm
0.9
-
0.95
-
A/W
-
0.15
1.5
nA
-
120
-
MHz
-
20
-
pF
-
200
-
MΩ
-
5 × 10¹²
-
cm·Hz^1/2/W
-
1 × 10^-14
-
W/Hz^1/2
1