G6742 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – InGaAs PIN photodiode

PHOTODIODE
InGaAs PIN photodiode
G6742 series
Surface-mount type
Features
l Small chip carrier package
l High reliability
l Low price
Applications
l Laser diode monitors
s General ratings
Parameter
Package
Active area
G6742-003
φ0.3
Ceramic base
s Absolute maximum ratings
Parameter
Symbol
Reverse voltage
VR Max.
Operating
temperature
Topr
Storage temperature Tstg
* No condensation
G6742-003
20
-40 to +85 *
-55 to +125 *
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Spectral response
range
λ
-
Peak sensitivity
wavelength
λp
-
Photo sensitivity
S
λ=1.3 µm
λ=1.55 µm
0.8
0.85
Dark current
ID VR=5 V
-
Cut-off frequency
fc
VR=5 V, RL=50 Ω
-3 dB
-
Terminal
capacitance
Ct
f=1 MHz
VR=5 V
-
Shunt resistance
Rsh VR=10 mV
-
Detectivity
D^∗ λ=λp
-
Noise equivalent
power
NEP λ=λp
-
G6742-003
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.3
300
10
1000
5 × 10¹²
4 × 10^-15
Max.
-
-
-
-
1.5
-
-
-
-
-
G6742-01
Unit
-
φ1.0
mm
G6742-01
Unit
10
V
°C
°C
G6742-01
Min.
Typ.
Max.
Unit
- 0.9 to 1.7 -
µm
-
1.55
-
0.8
0.9
-
0.85
0.95
-
-
1
5
-
35
-
µm
A/W
nA
MHz
-
90
-
pF
-
100
-
MΩ
-
5 × 10¹²
-
cm · Hz^1/2/W
-
2 × 10^-14
-
W/Hz^1/2