G5645 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – GaAsP photodiode

PHOTODIODE
GaAsP photodiode
Diffusion type
Short-wavelength type photodiode
Features
l Low dark current
l Narrow spectral response range
Applications
l Analytical instruments
l UV detection
s General ratings / Absolute maximum ratings
Type No.
G5645
G5842
G6262
G7189
Dimensional
outline/
Window
material *
➀/K
➁
➁
➂/R
Package
TO-18
Plastic
Plastic
Plastic
Active area
size
(mm)
0.8 × 0.8
Effective
active
area
(mm²)
0.58
Absolute maximum ratings
Reverse
Operating
Storage
voltage
temperature temperature
VR Max.
Topr
Tstg
(V)
(°C)
(°C)
5
-30 to +80
-40 to +85
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
G5645
G5842
G6262
G7189
Spectral Peak
response sensitivity
range wavelength
λ
λp
(nm) (nm)
Photo sensitivity
S
(A/W)
GaP
λp
LED
560 nm
Short circuit
current
Isc
1000 lx
Min. Typ.
(nA) (nA)
Dark
current
ID
VR=5 V
Max.
(pA)
Temp.
coefficient
of
ID
TCID
Rise time
tf
VR=0 V
RL=1 kΩ
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
Min. Typ.
(times/°C) (µs) (pF) (GΩ) (GΩ)
NEP
(W/Hz^1/2)
300 to 580 470 0.28 0.05 60 90
2.3 × 10^-15
260 to 400 370 0.06
-
-2
280 to 580 470 0.2 0.05 45 65
50
1.07
3
80
10
80
7.6 × 10^-15
2.3 × 10^-15
300 to 580 470 0.25 0.02 45 65
2.3 × 10^-15
* Window material K: borosilicate glass, R: resin coating