G10519-14 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – InGaAs APD with preamp

PHOTODIODE
InGaAs APD with preamp
G10519-14
ROSA, 1.3/1.55 µm, 2.7 Gbps
Features
l High-speed response: 2.7 Gbps
l High sensitivity: 27 mV/µW (λ=1.55 µm, M=10)
l Differential output
l Wide dynamic range: -5 to -33 dBm
l Optical return loss: 35 dB
l Isoration type: Housing and signal ground are
electrically isorated.
Applications
l Optical fiber communications
l SDH STM-16 long Haul
s Absolute maximum ratings
Parameter
Supply voltage
Reverse voltage (APD)
Reverse current (APD)
Forward current (APD)
Operating temperature *¹
Storage temperature *¹
*1: No condensation
Symbol
Vcc
VR Max.
IR
IF
Topr
Tstg
Value
-0.5 Min., +5 Max.
0 to VBR
2
0
-20 to +75
-40 to +85
s Electrical and optical characteristics
(Ta=25 °C, λ=1.55 µm, Vcc=3.3 V, Vee=0 V, RL=50 Ω *², M=10, unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ.
Responsivity
R
M=1, Pin= -27 dBm, Tc=25 °C
0.8
0.9
Supply current
Icc Dark state, RL=∞
-
25
Cut-off frequency
fc Pin= -27 dBm, -3 dB
1.7
2.0
Low cut-off frequency
fc-L Pin= -27 dBm, -3 dB
-
7
Trans-impedance *³
Tz RL=50 Ω, f=100 MHz
2
3
Breakdown voltage
VBR ID=100 µA, Dark state, Tc=25 °C 40
55
Temperature coefficient of VBR
-
Tc= -20 °C to 75 °C
-
0.11
Minimum receivable sensitivity
Pmin
2.7 Gbps, NRZ, PRBS=2²³-1
BER=10^-10,
-
-33
Maximum receivable sensitivity
Pmax ^{Extinction ratio=8.2 dB}
VR: the best voltage
-7
-5
Dark current
ID
Dark state,
VR=0.9 × VBR, Tc=25 °C
-
40
Optical return loss
ORL λ=1.31/1.55 µm
27
35
*2: Output: capacitive coupling
*3: Single-ended (Vout+) measurement
Max.
-
35
-
100
-
65
0.16
-31
-
80
-
Unit
V
V
mA
mA
°C
°C
Unit
A/W
mA
GHz
kHz
kΩ
V
V/°C
dBm
nA
dB
PRELIMINARY DATA
Feb. 2007
1