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G10518-51 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – InGaAs PIN photodiode with preamp
PHOTODIODE
InGaAs PIN photodiode with preamp
G10518-51/-54
ROSA type, 1.3 µm, 10 Gbps
Features
l φ1.25 mm (G10518-54)/ φ2.5 mm (G10518-51)
sleeve type ROSA (Receiver Optical Sub-Assembly)
l High-speed response: 10.7 Gbps
l Low power supply voltage: Vcc=Vpd=3.3 V
l Differential output
l Sensitivity: +3 to -19.5 dBm Typ.
l Trans-impedance: 6 kΩ Typ. (single-ended)
Applications
l SDH/SONET, 10 gigabit ethernet
l Optical fiber communications
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Supply voltage
Vcc
Reverse voltage (photodiode)
VR
Operating temperature
(case temperature)
Topr
Storage temperature
Tstg
Value
-0.5 Min, +3.7 Max
7
-20 to +85
-40 to +85
s Electrical and optical characteristics (Ta=25 °C, Vcc=3.05 to 3.53 V, Vpd=3.05 to 5.0 V, RL=50 Ω *2,
unless otherwise noted)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Responsivity
R
λ=1.31 µm
0.70
0.80
-
Supply current
Icc
Dark state, RL=∞
-
32
45
Cut-off frequency
fc
λ=1.31 µm, -3 dB
6.5
8.0
-
Low cut-off frequency
fc-L
λ=1.31 µm, -3 dB
-
10
50
Noise equivalent power *1
NEP Dark state, DC to 7.5 GHz
-
1.1
2.2
Trans-impedance *1
Tz
f=100 MHz
4
6
-
Minimum receivable sensitivity
Maximum receivable sensitivity
Pmin
Pmax
10 Gbps, NRZ, λ=1.31 µm
PRBS=231-1, BER=10-12
Extinction ratio=14 dB
-
-19.5
-17.5
+2
+3
-
Output amplitude
Vomax
300
450
650
Dark current
ID
Dark state, RL=∞
-
0.05
0.5
Optical return loss
ORL λ=1.31 µm
12
14
-
*1: Single-ended (Vout+) measurement
*2: Capacitive coupling
Unit
V
V
°C
°C
Unit
A/W
mA
GHz
kHz
µWrms
kΩ
dBm
dBm
mVpp
nA
dB
PRELIMINARY DATA
May 2007
1