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G10342-14 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – InGaAs PIN photodiode with preamp
PHOTODIODE
InGaAs PIN photodiode with preamp
G10342-14/-54
ROSA type, 1.3/1.55 µm, 10 Gbps
Features
l Compatible with 10 Gbps Miniature Device (XMD-MSA)
l High-speed response: 11.3 Gbps
l Low power supply voltage: Vcc=Vpd=3.3 V
l Differential output
l Sensitivity: +3 to -20.5 dBm
l High trans-impedance gain: 6 kΩ
l Low optical return loss: 35 dB Typ.
l Isolation type: Housing and signal ground are
electrically isolated.
l Flex board interface (G10342-54)
Applications
l SDH/SONET (STM-64/OC-192)
l 10 Gigabit Ethernet
l XFP transceiver
s Absolute maximum ratings
Parameter
Symbol
Value
Unit
Supply voltage
Vcc
-0.5, +3.7
V
Reverse voltage (photodiode)
VR
7
V
Storage temperature *1
Tstg
-40 to +90
°C
s Recommended operating conditions
Parameter
Symbol
Case temperature *1
Tc
Supply voltage
Vcc
Reverse voltage (photodiode)
Vpd
Spectral response range
λ
Load resistance *2
RL
Bit rate
-
Bit pattern
-
*1: No condensation
*2: Capacitive coupling
Value
-20 to 90
3.05 to 3.53
3.05 to 5.0
1.26 to 1.57
50
9 to 11.1
NRZ, Mark ratio=1/2
Unit
°C
V
V
µm
Ω
Gbps
-
s Electrical and optical characteristics (recommended operating conditions, unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Responsivity
R
λ=1.31 µm
λ=1.55 µm
0.75
0.85
-
0.8
0.9
-
A/W
Supply current
Icc
Dark state, RL=∞
-
32
45
mA
Cut-off frequency
fc
λ=1.55 µm, -3 dB
7.0
9.0
-
GHz
Low cut-off frequency
Noise equivalent power *3
fc-L
NEP
λ=1.55 µm, -3 dB
Dark state, to 7.5 GHz
-
10
50
kHz
-
1.0
-
µW rm s
Trans-impedance *3
Tz
RL=50 Ω, f=100 MHz
4
6
-
kΩ
Minimum receivable sensitivity
Maximum receivable sensitivity
Pmin
Pmax
λ=1.55 µm,
PRBS=231-1, BER=10-12,
Extinction ratio=14 dB
-
-20.5
-18.5
dBm
+1
+3
-
Output amplitude
Vomax Differential
300
450
650
mVpp
Dark current
ID
Dark state,
Vpd=3.3 V
Tc=25 °C
-
-
0.05
0.5
-
100
nA
Optical return loss
ORL λ=1.31/1.55 µm
27
35
-
dB
*3: Single-ended (Vout+) measurement
1