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F4655-13 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – MCP ASSEMBLY FOR HIGH RESOLUTION TOF-MS
PRELIMINARY DATA
MAY 1998
MCP ASSEMBLY
FOR HIGH RESOLUTION TOF-MS
F4655-13
High-speed response MCP assembly ideal for high resolution TOF-MS detector
Incorporates a two-stage MCP with 4µm channel diameter
The F4655-13 MCP assembly is an ideal detector for high reso-
lution TOF-MS (time-of-flight mass spectroscopy) because of a
two-stage MCP with 4µm channel diameter. Our own advanced
technology in optimizing MCP design allows obtaining an excel-
lent output waveform with negligible ringing even when detect-
ing very high-speed signals.The dimensions are exactly the same
as the F4655-10 MCP assembly, ensuring a compact configura-
tion and easy handling.
FEATURES
Excellent time response
50Ω impedance matching
Compact and lightweight
TMCPF0088
APPLICATION
TOF-MS (Time-of-flight mass spectrometer)
SPECIFICATIONS
GENERAL
Parameter
Assembly Outer Diameter
Effective Diameter
Maximum Height
MCP Channel Diameter
Number of MCP Stages
Value
38.0
14.5
31.9
4
2
Unit
mm
mm
mm
µm
-
MAXIMUM RATINGS (Absolute values)
MCP Supply Voltage (In-Out)
2
kV
MCP-Out to Anode Voltage
0.5
kV
Electric Potential at Each
Terminal
Operating Vacuum Condition
MCP-In: -2.5
MCP-Out: -0.5
Anode: GND
6.7×10-4 (5×10-6)
kV
Pa (Torr)
Baking Temperature
-∗
°C
Baking Time
-∗
h
Baking Vacuum Condition
-∗
Pa (Torr)
∗ Baking cannot be performed.
CHARACTERISTICS (at 1.3×10-4 Pa (1×10-6 Torr), Ta=+25°C)
Gain at 2.0kV
1×106
-
Plate Resistance per MCP
Dark Count at 2.0kV
10 to 100
5
MΩ
cps/cm2
.
Figure 1: Typical Output Waveform
TMCPB0079EA
RISE TIME: 293ps
FALL TIME: 539ps
FWHM : 455ps
SUPPLY VOLTAGE (MCP): -1520V
RESPONSE TIME (0.5ns/div)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject
to change without notice. No patent rights are granted to any of the circuits described herein. © 1998 Hamamatsu Photonics K.K.