F4655-12 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – COMPACT MCP ASSEMBLY FOR TOF

COMPACT MCP ASSEMBLY
FOR TOF (TIME OF FLIGHT)
F4655-12
High Speed Detection of Positive / Negative Ion or Electron
FEATURES
Detection of Positive/Negative lon or Electron
High Speed Response
High Gain
High S/N Ratio
High Pulse Height Resolution
Wide Dynamic Range
Compact and Lightweight
APPLICATION
TOF Detector
TMCPF0068
F4655-12 is the best suited detector for a TOF measurement with positive/negative ion or electron. It allows to detect a charged
particles (ions, electron, etc.) having any polarity in a high speed with keeping a high gain and wide dynamic range of F4655
series. Its output will give a high speed output waveform without a ringing. In addition, the potential of output connector can be
the ground even an MCP anode is high voltage like an electron detection due to a coupling capacitor, which allows the handling
very easy.
SPECIFICATIONS
GENERAL
Parameter
Assembly Outer Diameter
Effective Diameter
Maximum Height
MCP Channel Diameter
MCP Stage Number
Description/Value
50.0
14.5
35.2
12
2
Unit
mm
mm
mm
m
stage
MAXIMUM RATINGS
Parameter
MCP Supply Voltage (In-Out)
MCP Out - Anode Voltage
Electric Potential of Each Terminal
Operating Vacuum Condition
Ambient Temperature
Baking Temperature
Baking Time
Vacuum Condition for Baking
*^{F4655-12 is not allowed to be baked.}
TYPICAL CHARACTERISTICS (Vacuum condition 1.3
Parameter
Gain at 2.4 kV
Pulse Height Resolution (FWHM) at 2.4 kV
Plate Resistance (2-stage MCP)
Maximum Linear Output
Dark Count at 2.4 kV
Rise Time
Pulse Width (FWHM)
Description/Value
2.5
0.5
± 3.0
1.3 10^-3 (1 10^-5)
+10 to +40
–_*
–_*
–_*
Unit
kV
kV
kV
Pa (Torr)
hours
Pa (Torr)
10^-4 Pa (1 10^-6 Torr), Ambient Temperature: +25 )
Description/Value
5 10⁷
Unit
–
50
% Max.
60 to 140
M
1
A
3
cps/cm²
400
ps
750
ps
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lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. _© 1995 Hamamatsu Photonics K.K.