F2223-21SH Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – MCP ASSEMBLY

MCP ASSEMBLY
F2223-21SH
This MCP assembly is a suitable detector for an electron or ion
beam in SEM, SIM or Lithography.
It is possible to detect some signal from a sample with high sensitivi-
ty, that can be performed with the compactness and the center hole
of this assembly. It allows to set this assembly at close position to
the sample and gives better efficiency in the beam detection.
FEATURES
GHigh Sensitivity
GHigh S/N Ratio
GWide Dynamic Range
GCenter Hole for Beam Line
GCompact and Lightweight
APPLICATIONS
GScanning Electron Microscopy
GScanning Ion Microscopy
GElectron Lithography
GMask Aligner
GElectron Beam Measuring System
GIon Scattering Spectroscopy
TMCPF0020
SPECIFICATIONS
GENERAL
Parameter
Assembly Outer Size
Effective Area
Height (Max.)
MCP Channel Diameter
Number of MCPs
MCP Center Dead Area
Value
Unit
56.5
mm
27.0
mm
8.6
mm
12
µm
2
—
8
mm
RATINGS
MCP Supply Voltage (Max.)
MCP-Out to Anode Supply Voltage (Max.)
Mesh to MCP-In Supply Voltage
Anode to Substrate Supply Voltage
Operating Vacuum Condition (Max.)
Ambient Temperature
Baking Temperature
Baking Time
Vacuum Condition for Baking (Max.)
2
0.5
0.5
3
1.3 × 10^-4
+10 to +40
300
10
1.3 × 10^-4
kV
kV
kV
kV
Pa
°C
°C
Hours
Pa
TYPICAL ELECTRICAL CHARACTERISTICS (Supply Voltage: 2 kV, Vacuum: 1.3 × 10^-4 Pa, Operating Ambient Temperature: +25 °C)
Gain at 1.8 kV (Min.)
1 × 10⁶
—
Plate Resistance
20 to 40
MΩ / MCP
Maximum Linear Output
7 % of strip current under uniform input into whole MCP effective area
—
Dark Current
20
pA · cm^-2
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K.