MB1S-10S Datasheet, PDF (2/2 Pages) Gaomi Xinghe Electronics Co., Ltd. – Glass passivated chip junctions

FIG.1 -- DERATING CURVE FOR OUTPUT
RRECTIFIED CURRENT
0.8
Aluminum Substrate
0.7
GLASS
0.6
EPOXY
P.C.B.
0.5
0.4
0.3
0.2
0.1
RESISTIVE OR INDUCTIVE LOAD
0
0
30
60
90
120
150
AMBIENT TEMPERATURE,
FIG.3 -- TYPICAL FORWARD VOLTAGE
KKKKCHARACTERISTICS PER LEG
10
1
TJ=25
0.1
PULSE WIDTH=300µS
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
2
MB1S-MB10S
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 0.5 A
FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT PER LEG
35
30
25
20
15
10
5.0
0
1
T=
SINGLE HALF SINE-WAVE
(JEDEC Method)
f=60Hz
f=50Hz
1.0 CYCLE
10
100
NUMBER OF CYCLES AT 50/60Hz
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
100
10
1.0
0.1
.01
0
TJ=125
TJ=25
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER
BBBBBBB ELEMENT
100
60
f=1MHz
40
TJ=25
20
10
4
2
1
.1 .2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE, VOLTS