LL60 Datasheet, PDF (1/3 Pages) Weitron Technology – Schottky Barrier Diodes

LL60, LL60P
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
Metal-on-silicon junction, majority carrier conduction
High current capability, Low forward voltage drop
Extremely low reverse current IR
Ultra speed switching characteristics
Small temperature coefficient of forward characteristics
Satisfactory wave detection efficiency
For use in recorder, TV ,radio and telephone as detectors
Super high speed switching cirits, small current rectifier
High temperature soldering guaranteed:260℃/10 seconds at terminals
MECHANICAL DATA
Case: MiniMELF glass case(SOD-80 )
Polarity: Color band denotes cathode end
Weight: Approx. 0.05 gram
ABSOLUTE RATINGS(LIMITING VALUES)
MiniMELF
0.142(3.6)
0.134(3.4)
0.063(1.6)
0.055(1.4)
0.019(0.48)
0.011(0.28)
Dimensions in inches and (millimeters)
Symblos
VRRM
IF
IFSM
TSTG/TJ
TL
Parameters
Repetitive Peak Reverse Voltage
Forward Continuous Current
TA=25 C
Peak Forward Surge Current(t=1s)
Storage and junction Temperature Range
Maximum Lead Temperature for Soldering during 10s at 4mm from Case
Value
LL60
LL60P
40
40
30
50
150
400
-55 to+125
260
Units
Volts
mA
mA
C
C
ELECTRICAL CHARACTERISTICS
Symblos
Parameters
Test Conditions
Min.
VF
Forward Voltage
IR
Reverse Current
CJ
Junction Capacitance
IF=1mA
IF=30mA
IF=200mA
VR=15V
VR=1V f=1MHz
VR=10V f=1MHz
LL60
LL60P
LL60
LL60P
LL60
LL60P
LL60
LL60P
h
Detection Efficiency(See diagram 4)
VI=3V f=30MHz CL=10pF RL=3.8kW
trr
RqJA
Reverse Recovery time
Junction Ambient Thermal Resistance
IF=IR=1mA Irr=1mA Rc=100W
1
Value
Typ.
0.35
0.26
0.70
0.70
1.0
5.0
4.0
10.0
60
400
Max.
0.5
0.5
1.0
1.0
5.0
10.0
1
Units
Volts
mA
pF
%
ns
C/W